Datasheet ZTX690B (Diodes) - 2

NPN SILICON PLANAR MEDIUM POWER ZTX690B HIGH GAIN TRANSISTOR ZTX690B ISSUE 1 – MAY 94 ELECTRICAL CHARACTERISTICS (at T FEATURES amb = 25°C) * 45 Volt VCEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Gain of 400 at IC=1 Amp Transition Frequency fT 150 MHz IC=50mA, VCE=5V * Very low saturation voltage f=50MHz APPLICATIONS Input Capacitance Cibo 200 pF VEB=0.5V, f=1MHz * Darlington replacement C Output Capacitance Cobo 16 pF VCB=10V, f=1MHz * Siren Drivers B E Switching Times ton 33 ns IC=500mA, IB!=50mA * Battery powered circuits E-Line toff 1300 ns IB2=50mA, VCC=10V * Motor drivers TO92 Compatible *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT THERMAL CHARACTERISTICS Col ector-Base Voltage VCBO 45 V Collector-Emitter Voltage V PARAMETER SYMBOL MAX. UNIT CEO 45 V Emitter-Base Voltage VEBO 5 V Thermal Resistance:Junction to Ambient1 Rth(j-amb)1 175 °C/W Peak Pulse Current ICM 6 A Junction to Ambient2 Rth(j-amb)2 † 116 °C/W Junction to Case Rth(j-case) 70 °C/W Continuous Collector Current IC 2 A Practical Power Dissipation* P † Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. totp 1.5 W Power Dissipation at Tamb=25°C Ptot 1 W derate above 25°C 5.7 mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 2.5 200 ) Col ector-Base Breakdown V D=1 (D.C.) (BR)CBO 45 V IC=100µA tts) a W Voltage W 2.0 t1 D=t1/tP ( °C/ - Case temperature Col ector-Emitter Breakdown V n (BR)CEO 45 V IC=10mA* oi 1.5 nce ( tP Voltage ta 100 sipat D=0.5 Emitter-Base Breakdown V(BR)EBO 5 V IE=100µA is Ambient temperat esis 1.0 Voltage Dr l R a we D=0.2 Collector Cut-Off Current I 0.5 ur rm CBO 0.1 µA VCB=35V e e D=0.1 h T Single Pulse Emitter Cut-Off Current I ax Po EBO 0.1 µA VEB=4V M 0 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector-Emitter Saturation VCE(sat) 0.1 V IC=0.1A, IB=0.5mA* T -Temperature (°C) Pulse Width (seconds) Voltage 0.5 V IC=1A, IB=5mA* Base-Emitter V
Derating curve Maximum transient thermal impedance
BE(sat) 0.9 V IC=1A, IB=10mA* Saturation Voltage Base-Emitter VBE(on) 0.9 V IC=1A, VCE=2V* Turn-On Voltage Static Forward Current hFE 500 IC=100mA, VCE=2V* Transfer Ratio 400 IC=1A, VCE=2V* 150 IC=2A, VCE=2V* 3-239 3-238