Datasheet BT138-800E (NXP) - 7
| Hersteller | NXP |
| Beschreibung | 4Q Triac |
| Seiten / Seite | 13 / 7 — NXP Semiconductors. BT138-800E. 4Q Triac. 9. Characteristics. Table 6. … |
| Dateiformat / Größe | PDF / 190 Kb |
| Dokumentensprache | Englisch |
NXP Semiconductors. BT138-800E. 4Q Triac. 9. Characteristics. Table 6. Characteristics. Symbol. Parameter. Conditions. Min. Typ. Max. Unit
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NXP Semiconductors BT138-800E 4Q Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; - 2.5 10 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; - 4 10 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; - 5 10 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; - 11 25 mA Tj = 25 °C; Fig. 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; - - 30 mA Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2+ G-; - - 40 mA Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G-; - - 30 mA Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G+; - - 40 mA Tj = 25 °C; Fig. 8 IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 30 mA VT on-state voltage IT = 15 A; Tj = 25 °C; Fig. 10 - 1.4 1.65 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; - 0.7 1 V Fig. 11 VD = 400 V; IT = 0.1 A; Tj = 125 °C; 0.25 0.4 - V Fig. 11 ID off-state current VD = 800 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state VDM = 536 V; Tj = 125 °C; (VDM = 67% - 150 - V/µs voltage of VDRM); exponential waveform; gate open circuit tgt gate-controlled turn-on ITM = 16 A; VD = 800 V; IG = 0.1 A; dIG/ - 2 - µs time dt = 5 A/µs BT138-800E All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 30 August 2013 7 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Limiting values 8. Thermal characteristics 9. Characteristics 10. Package outline 11. Legal information
NXP Semiconductors BT138-800E 4Q Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; - 2.5 10 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; - 4 10 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; - 5 10 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; - 11 25 mA Tj = 25 °C; Fig. 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; - - 30 mA Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2+ G-; - - 40 mA Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G-; - - 30 mA Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G+; - - 40 mA Tj = 25 °C; Fig. 8 IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 30 mA VT on-state voltage IT = 15 A; Tj = 25 °C; Fig. 10 - 1.4 1.65 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; - 0.7 1 V Fig. 11 VD = 400 V; IT = 0.1 A; Tj = 125 °C; 0.25 0.4 - V Fig. 11 ID off-state current VD = 800 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state VDM = 536 V; Tj = 125 °C; (VDM = 67% - 150 - V/µs voltage of VDRM); exponential waveform; gate open circuit tgt gate-controlled turn-on ITM = 16 A; VD = 800 V; IG = 0.1 A; dIG/ - 2 - µs time dt = 5 A/µs BT138-800E All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 30 August 2013 7 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Limiting values 8. Thermal characteristics 9. Characteristics 10. Package outline 11. Legal information