Datasheet BT138-800E (NXP) - 4

HerstellerNXP
Beschreibung4Q Triac
Seiten / Seite13 / 4 — NXP Semiconductors. BT138-800E. 4Q Triac. Fig. 1. RMS on-state current as …
Dateiformat / GrößePDF / 190 Kb
DokumentenspracheEnglisch

NXP Semiconductors. BT138-800E. 4Q Triac. Fig. 1. RMS on-state current as a function of mounting

NXP Semiconductors BT138-800E 4Q Triac Fig 1 RMS on-state current as a function of mounting

Modelllinie für dieses Datenblatt

Textversion des Dokuments

NXP Semiconductors BT138-800E 4Q Triac
003aaj938 15 003aaj940 50 IT(RMS) IT(RMS) (A) 99 °C (A) 12 40 9 30 6 20 3 10 0 0 -50 0 50 100 150 10-2 10-1 1 10 Tmb (°C) surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
f = 50 Hz; Tmb = 99 °C
base temperature; maximum values Fig. 2. RMS on-state current as a function of surge duration; maximum values
003aaj942 20 95 conduction form Ptot angle factor Tmb(max) (W) (degrees) a α = 180° (°C) 16 30 4 101 120° 60 2.8 90 2.2 α 90° 12 120 1.9 180 1.57 107 60° 30° 8 113 4 119 0 125 0 3 6 9 12 15 IT(RMS) (A) α = conduction angle a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
BT138-800E All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 30 August 2013 4 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Limiting values 8. Thermal characteristics 9. Characteristics 10. Package outline 11. Legal information