Datasheet IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 (Vishay) - 6

HerstellerVishay
BeschreibungPower MOSFET
Seiten / Seite13 / 6 — IRFR9310, IRFU9310, SiHFR9310, SiHFU9310. Fig. 12a - Unclamped Inductive …
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IRFR9310, IRFU9310, SiHFR9310, SiHFU9310. Fig. 12a - Unclamped Inductive Test Circuit

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Fig 12a - Unclamped Inductive Test Circuit

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IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
www.vishay.com Vishay Siliconix L VDS IAS R - g D.U.T. + A VDD IAS - 20 V Driver t 0.01 p Ω tp 15 V VDS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
300 J) ID m TOP -0.49A 250 -0.7A gy ( BOTTOM -1.1A 200 nche Ener a 150 e Aval s 100 Pul e ngl 50 Si ASE , 025 50 75 100 125 150 Starting T , Junction Temperature ( C ° ) J
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G - 10 V 12 V 0.2 µF 0.3 µF Q Q - GS GD + V D.U.T. DS VG VGS - 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
S21-0373-Rev. E, 19-Apr-2021
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Document Number: 91284 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000