Datasheet Si2334DS (Vishay) - 6

HerstellerVishay
BeschreibungN-Channel 30 V (D-S) MOSFET
Seiten / Seite9 / 6 — Si2334DS. TYPICAL CHARACTERISTICS. Normalized Thermal Transient …
Dateiformat / GrößePDF / 190 Kb
DokumentenspracheEnglisch

Si2334DS. TYPICAL CHARACTERISTICS. Normalized Thermal Transient Impedance, Junction-to-Ambient

Si2334DS TYPICAL CHARACTERISTICS Normalized Thermal Transient Impedance, Junction-to-Ambient

Modelllinie für dieses Datenblatt

Textversion des Dokuments

Si2334DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 1 Duty Cycle = 0.5 ransient 0.2 T 0.1 Impedance Notes: fective 0.1 Ef P 0.05 DM Thermal t1 0.02 t2 t Normalized 1 1. Duty Cycle, D = t2 2. Per Unit Base = RthJA = 166 °C/W 3. T (t) JM - TA = PDMZthJA Single Pulse 4. Surface Mounted 0.01 10-3 10-2 10-1 10-4 1 10 100 1000 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5 ransient 0.2 T 0.1 Impedance fective 0.1 Ef 0.05 Thermal 0.02 Normalized Single Pulse 0.01 10-3 10-2 10-1 10-4 1 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66802. www.vishay.com Document Number: 66802 6 S10-1533-Rev. A, 19-Jul-10