Datasheet MRF8P29300HR6, MRF8P29300HSR6 (NXP) - 2

Table 3. ESD Protection Characteristics Test Methodology Class
Human Body Model (per JESD22- A114) 2 (Minimum) Machine Model (per EIA/JESD22- A115) A (Minimum) Charge Device Model (per JESD22- C101) IV (Minimum)
Table 4. Electrical Characteristics
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit Off Characteristics (1)
Gate- Source Leakage Current IGSS — — 1 μAdc (VGS = 5 Vdc, VDS = 0 Vdc) Zero Gate Voltage Drain Leakage Current IDSS — — 1 μAdc (VDS = 30 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current IDSS — — 10 μAdc (VDS = 65 Vdc, VGS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
VGS(th) 1.0 1.9 2.5 Vdc (VDS = 10 Vdc, ID = 345 μAdc) Gate Quiescent Voltage
(2)
VGS(Q) 1.5 2.3 3.0 Vdc (VDD = 30 Vdc, ID = 100 mAdc, Measured in Functional Test) Drain- Source On- Voltage
(1)
VDS(on) 0.1 0.18 0.3 Vdc (VGS = 10 Vdc, ID = 2 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance Crss — 2.53 — pF (VDS = 30 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance Coss — 470 — pF (VDS = 30 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance Ciss — 264 — pF (VDS = 30 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Functional Tests (2)
(In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Peak (32 W Avg.), f = 2900 MHz, 100 μsec Pulse Width, 10% Duty Cycle Power Gain Gps 12.0 13.3 15.0 dB Drain Efficiency ηD 47.0 50.5 — % Input Return Loss IRL — - 17 - 9 dB
Typical Pulsed RF Performance
(In Freescale 2″x3″ Compact Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Peak (32 W Avg.), 300 μsec Pulse Width, 10% Duty Cycle
Gps
η
D IRL Frequency (dB) (%) (dB)
2700 MHz 13.9 49.3 - 11 2800 MHz 14.0 49.8 - 18 2900 MHz 13.0 49.6 - 15 1. Each side of device measured separately. 2. Measurement made with device in push- pull configuration.
MRF8P29300HR6 MRF8P29300HSR6
RF Device Data 2 Freescale Semiconductor