Datasheet NSI50350AD (ON Semiconductor) - 3
| Hersteller | ON Semiconductor |
| Beschreibung | Constant Current Regulator & LED Driver 50 V, 350 mA +- 10%, 11 W Package |
| Seiten / Seite | 9 / 3 — NSI50350ADT4G. THERMAL CHARACTERISTICS. Characteristic. Symbol. Max. … |
| Dateiformat / Größe | PDF / 255 Kb |
| Dokumentensprache | Englisch |
NSI50350ADT4G. THERMAL CHARACTERISTICS. Characteristic. Symbol. Max. Unit. http://onsemi.com
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NSI50350ADT4G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
Total Device Dissipation (Note 4) TA = 25°C PD 4144 mW Derate above 25°C 27.62 mW/°C Thermal Resistance, Junction−to−Ambient (Note 4) RθJA 36.2 °C/W Thermal Reference, Junction−to−Tab (Note 4) Rψ 1.16 °C/W JL Total Device Dissipation (Note 5) TA = 25°C PD 6383 mW Derate above 25°C 42.6 mW/°C Thermal Resistance, Junction−to−Ambient (Note 5) RθJA 23.5 °C/W Thermal Reference, Junction−to−Tab (Note 5) Rψ 1.07 °C/W JL Total Device Dissipation (Note 6) TA = 25°C PD 8671 mW Derate above 25°C 57.8 mW/°C Thermal Resistance, Junction−to−Ambient (Note 6) RθJA 17.3 °C/W Thermal Reference, Junction−to−Tab (Note 6) Rψ 0.76 °C/W JL Total Device Dissipation (Note 7) TA = 25°C PD 11029 mW Derate above 25°C 73.5 mW/°C Thermal Resistance, Junction−to−Ambient (Note 7) RθJA 13.6 °C/W Thermal Reference, Junction−to−Tab (Note 7) Rψ 0.72 °C/W JL Total Device Dissipation (Note 8) TA = 25°C PD 4202 mW Derate above 25°C 28.01 mW/°C Thermal Resistance, Junction−to−Ambient (Note 8) RθJA 35.7 °C/W Thermal Reference, Junction−to−Tab (Note 8) Rψ 5.4 °C/W JL NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9. Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical measurements and method of attachment. 4. 400 mm2, see below PCB description, still air. 5. 900 mm2, see below PCB description, still air. 6. 1600 mm2, see below PCB description, still air. 7. 2500 mm2, see below PCB description, still air. (For NOTES 4−7: PCB is DENKA K1, 1.5 mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent). 8. 1000 mm2, FR4, 3 oz Cu, still air.
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NSI50350ADT4G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
Total Device Dissipation (Note 4) TA = 25°C PD 4144 mW Derate above 25°C 27.62 mW/°C Thermal Resistance, Junction−to−Ambient (Note 4) RθJA 36.2 °C/W Thermal Reference, Junction−to−Tab (Note 4) Rψ 1.16 °C/W JL Total Device Dissipation (Note 5) TA = 25°C PD 6383 mW Derate above 25°C 42.6 mW/°C Thermal Resistance, Junction−to−Ambient (Note 5) RθJA 23.5 °C/W Thermal Reference, Junction−to−Tab (Note 5) Rψ 1.07 °C/W JL Total Device Dissipation (Note 6) TA = 25°C PD 8671 mW Derate above 25°C 57.8 mW/°C Thermal Resistance, Junction−to−Ambient (Note 6) RθJA 17.3 °C/W Thermal Reference, Junction−to−Tab (Note 6) Rψ 0.76 °C/W JL Total Device Dissipation (Note 7) TA = 25°C PD 11029 mW Derate above 25°C 73.5 mW/°C Thermal Resistance, Junction−to−Ambient (Note 7) RθJA 13.6 °C/W Thermal Reference, Junction−to−Tab (Note 7) Rψ 0.72 °C/W JL Total Device Dissipation (Note 8) TA = 25°C PD 4202 mW Derate above 25°C 28.01 mW/°C Thermal Resistance, Junction−to−Ambient (Note 8) RθJA 35.7 °C/W Thermal Reference, Junction−to−Tab (Note 8) Rψ 5.4 °C/W JL NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9. Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical measurements and method of attachment. 4. 400 mm2, see below PCB description, still air. 5. 900 mm2, see below PCB description, still air. 6. 1600 mm2, see below PCB description, still air. 7. 2500 mm2, see below PCB description, still air. (For NOTES 4−7: PCB is DENKA K1, 1.5 mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent). 8. 1000 mm2, FR4, 3 oz Cu, still air.
http://onsemi.com 3