Datasheet MB2S, MB4S, MB6S (Vishay) - 3
| Hersteller | Vishay |
| Beschreibung | Miniature Glass Passivated Fast Recovery Surface-Mount Bridge Rectifier |
| Seiten / Seite | 5 / 3 — MB2S, MB4S, MB6S. RATINGS AND CHARACTERISTICS CURVES |
| Dateiformat / Größe | PDF / 103 Kb |
| Dokumentensprache | Englisch |
MB2S, MB4S, MB6S. RATINGS AND CHARACTERISTICS CURVES
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MB2S, MB4S, MB6S
www.vishay.com Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted) 0.8 100 Aluminum Substrate 0.7 rrent (A) T = 125 °C u 0.6 10 J 0.5 erse Leakage v 0.4 Glass 1 Epoxy s Re rrent (µA) ard Rectified C u u 0.3 PCB w C r o 0.2 0.1 age F 0.1 Resistive or Inductive Load T = 25 °C er Instantaneo J v A 0 0.01 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 Ambient Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Derating Curve for Output Rectified Current Fig. 4 - Typical Reverse Leakage Characteristics Per Diode 35 30 T = 40 °C A Single Half Sine-Wave T = 25 °C 30 J 25 f = 1.0 MHz V = 50 mV sig p-p rrent (A) 25 u 20 20 f = 50 Hz f = 60 Hz rge C u 15 15 ard S rw 10 o 10 nction Capacitance (pF) u J eak F 5 5 P 1.0 Cycle 0 0 1 10 100 0.1 1 10 100 1000 Number of Cycles Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance Per Diode Per Diode 10 T = 150 °C J rrent (A) u 1 T = 25 °C J ard C rw o s F u 0.1 Pulse Width = 300 µs 1 % Duty Cycle Instantaneo 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Instantaneous Forward Voltage (V) Fig. 3 - Typical Forward Voltage Characteristics Per Diode Revision: 04-Aug-2020
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Document Number: 88661 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted) 0.8 100 Aluminum Substrate 0.7 rrent (A) T = 125 °C u 0.6 10 J 0.5 erse Leakage v 0.4 Glass 1 Epoxy s Re rrent (µA) ard Rectified C u u 0.3 PCB w C r o 0.2 0.1 age F 0.1 Resistive or Inductive Load T = 25 °C er Instantaneo J v A 0 0.01 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 Ambient Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Derating Curve for Output Rectified Current Fig. 4 - Typical Reverse Leakage Characteristics Per Diode 35 30 T = 40 °C A Single Half Sine-Wave T = 25 °C 30 J 25 f = 1.0 MHz V = 50 mV sig p-p rrent (A) 25 u 20 20 f = 50 Hz f = 60 Hz rge C u 15 15 ard S rw 10 o 10 nction Capacitance (pF) u J eak F 5 5 P 1.0 Cycle 0 0 1 10 100 0.1 1 10 100 1000 Number of Cycles Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance Per Diode Per Diode 10 T = 150 °C J rrent (A) u 1 T = 25 °C J ard C rw o s F u 0.1 Pulse Width = 300 µs 1 % Duty Cycle Instantaneo 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Instantaneous Forward Voltage (V) Fig. 3 - Typical Forward Voltage Characteristics Per Diode Revision: 04-Aug-2020
3
Document Number: 88661 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000