Datasheet TCTH011AE, TCTH012AE, TCTH021AE, TCTH022AE, TCTH011BE, TCTH012BE, TCTH021BE, TCTH022BE (Toshiba) - 2

TCTH0xxxE Series Absolute Maximum Ratings (Ta = 25 °C)
Characteristics Symbol Ratings Unit Supply Voltage VDD -0.3 to 6.0 V PTCO Voltage VPTCO -0.3 to VDD + 0.3 ≤ 6.0 V TCTH0xxAE -0.3 to VDD + 0.3 ≤ 6.0 V PTCGOOD Voltage VPTCGOOD TCTH0xxBE -0.3 to 6.0 V RESET Voltage VRESET -0.3 to VDD + 0.3 ≤ 6.0 V 150 (Note 1) Power dissipation PD mW 320 (Note 2) Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant changing in temperature, etc.) may cause this product to reduce the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design appropriatly upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Unit Rating Note 2: Rating at mounting on a board (FR4 board dimension: 30 mm x 30 mm x 0.8 mm)
Operating Ranges
Characteristics Symbol Operating Ranges Unit Supply Voltage VDD 1.7 to 5.5 V TCTH0xxAE 0 to VDD V PTCGOOD Output Voltage VPTCGOOD TCTH0xxBE 0 to 5.5 V RESET Voltage VRESET 0 to VDD V Operation Temperature Topr -40 to 125 °C Note3: There is possibility for significant negative affect for reliability, if this product used long time on the state includes limit or very close condition on Operating ranges. Exposure to such conditions may adversely impact product reliability lifetime average junction temperature of 107 ºC. © 2023 2 2023-04-25 Toshiba Electronic Devices & Storage Corporation Rev. 2.0