Datasheet LME49710 (National Semiconductor) - 8

HerstellerNational Semiconductor
BeschreibungHigh Performance, High Fidelity Audio Operational Amplifier
Seiten / Seite28 / 8 — THD+N vs Frequency. = 15V, V. = –15V,. = 17V, V. = –17V,. R = 2k. , V. = …
Dateiformat / GrößePDF / 840 Kb
DokumentenspracheEnglisch

THD+N vs Frequency. = 15V, V. = –15V,. = 17V, V. = –17V,. R = 2k. , V. = 3V. OUT. RMS. LME49710. R = 10k

THD+N vs Frequency = 15V, V = –15V, = 17V, V = –17V, R = 2k , V = 3V OUT RMS LME49710 R = 10k

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THD+N vs Frequency THD+N vs Frequency V = 15V, V = –15V, V = 17V, V = –17V, CC EE CC EE R = 2k

, V = 3V R = 2k

, V = 3V L OUT RMS L OUT RMS LME49710
20210464 20210467
THD+N vs Frequency THD+N vs Frequency V = 15V, V = –15V, V = 17V, V = –17V, CC EE CC EE R
= 600Ω
, V = 3V R
= 600Ω
, V = 3V L OUT RMS L OUT RMS
20210466 20210469
THD+N vs Frequency THD+N vs Frequency V = 15V, V = –15V, V = 17V, V = –17V, CC EE CC EE R = 10k

, V = 3V R = 10k

, V = 3V L OUT RMS L OUT RMS
20210465 20210468 www.national.com 8 Document Outline LME49710 General Description Key Specifications Features Applications Typical Application FIGURE 1. Passively Equalized RIAA Phono Preamplifier Connection Diagrams Absolute Maximum Ratings Electrical Characteristics Typical Performance Characteristics Application Hints Noise Measurement Circuit Typical Applications Application Information DISTORTION MEASUREMENTS FIGURE 2. THD+N and IMD Distortion Test Circuit Revision History Physical Dimensions