Datasheet LME49710 (National Semiconductor) - 4

HerstellerNational Semiconductor
BeschreibungHigh Performance, High Fidelity Audio Operational Amplifier
Seiten / Seite28 / 4 — Absolute Maximum Ratings
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DokumentenspracheEnglisch

Absolute Maximum Ratings

Absolute Maximum Ratings

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Absolute Maximum Ratings
(Notes 1, 2) ESD Susceptibility (Note 5) 200V Junction Temperature 150°C
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Thermal Resistance
LME49710 Distributors for availability and specifications.
 θ (SO) JA 145°C/W Power Supply Voltage  θ (NA) JA 102°C/W (V = V+ - V-) S 36V  θ (HA) JA 150°C/W Storage Temperature −65°C to 150°C  θ (HA) JC 35°C/W Input Voltage (V-) - 0.7V to (V+) + 0.7V Temperature Range Output Short Circuit (Note 3) Continuous T ≤ T ≤ T –40°C ≤ T ≤ 85°C MIN A MAX A Power Dissipation Internally Limited Supply Voltage Range ±2.5V ≤ V ≤ ± 17V ESD Susceptibility (Note 4) 2000V S
Electrical Characteristics
(Notes 1, 2) The following specifications apply for V = ±15V, R = 2kΩ, f = 1kHz, and T = 25°C, unless otherwise specified. S L IN A
LME49710 Units Symbol Parameter Conditions Typical Limit (Limits)
(Note 6) (Notes 7, 8) A = 1, V = 3V V OUT RMS THD+N Total Harmonic Distortion + Noise R = 2kΩ L 0.00003 % (max) R = 600Ω L 0.00003 0.00009 % (max) A = 1, V = 3V IMD Intermodulation Distortion V OUT RMS 0.00005 % (max) Two-tone, 60Hz & 7kHz 4:1 GBWP Gain Bandwidth Product 55 45 MHz (min) SR Slew Rate ±20 ±15 V/μs (min) V = 1V , –3dB OUT P-P FPBW Full Power Bandwidth referenced to output magnitude 10 MHz at f = 1kHz A = 1, 10V step, C = 100pF t V L s Settling time 0.1% error range 1.2 μs Equivalent Input Noise Voltage f = 20Hz to 20kHz 0.34 0.65 BW μVRMS en f = 1kHz 2.5 4.7  nV
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√Hz Equivalent Input Noise Density f = 10Hz 6.4  nV
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√Hz i f = 1kHz 1.6 n  pA
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√Hz Current Noise Density f = 10Hz 3.1  pA
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√Hz V Offset Voltage ±0.05 ±0.7 mV (max) OS Δ Average Input Offset Voltage Drift vs V /ΔTemp μ OS 40°C ≤ T ≤ 85°C 0.2 V/°C Temperature A Average Input Offset Voltage Shift vs PSRR ΔV = 20V (Note 9) 125 110 dB (min) Power Supply Voltage S I Input Bias Current V = 0V 7 72 nA (max) B CM Δ Input Bias Current Drift vs I /ΔTemp nA/°C OS –40°C ≤ T ≤ 85°C 0.1 Temperature A I Input Offset Current V = 0V 5 65 nA (max) OS CM Common-Mode Input Voltage Range +14.1 (V+) – 2.0 V (min) VIN-CM –13.9 (V-) + 2.0 V (min) CMRR Common-Mode Rejection –10V<V <10V CM 120 110 dB (min) Differential Input Impedance 30 kΩ ZIN Common Mode Input Impedance –10V<V <10V CM 1000 MΩ –10V<V <10V, R = 600Ω 140 dB OUT L AVOL Open Loop Voltage Gain –10V<V <10V, R = 2kΩ 140 125 dB OUT L –10V<V <10V, R = 10kΩ 140 dB OUT L www.national.com 4 Document Outline LME49710 General Description Key Specifications Features Applications Typical Application FIGURE 1. Passively Equalized RIAA Phono Preamplifier Connection Diagrams Absolute Maximum Ratings Electrical Characteristics Typical Performance Characteristics Application Hints Noise Measurement Circuit Typical Applications Application Information DISTORTION MEASUREMENTS FIGURE 2. THD+N and IMD Distortion Test Circuit Revision History Physical Dimensions