Datasheet ALD1106, ALD1116 (Advanced Linear Devices)
| Hersteller | Advanced Linear Devices |
| Beschreibung | Quad/Dual N-Channel Matched Pair Mosfet Array |
| Seiten / Seite | 9 / 1 — ALD1106/ALD1116. QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY. GENERAL … |
| Dateiformat / Größe | PDF / 84 Kb |
| Dokumentensprache | Englisch |
ALD1106/ALD1116. QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY. GENERAL DESCRIPTION. APPLICATIONS. PIN CONFIGURATION. ALD1116
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ADVANCED LINEAR DEVICES, INC.
ALD1106/ALD1116 QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS
The ALD1106/ALD1116 are monolithic quad/dual N-channel enhance- • Precision current mirrors ment mode matched MOSFET transistor arrays intended for a broad • Precision current sources range of precision analog applications. The ALD1106/ALD1116 offer • Voltage choppers high input impedance and negative current temperature coefficient. The • Differential amplifier input stage transistor pairs are matched for minimum offset voltage and differential • Voltage comparator thermal response, and they are designed for precision analog switching • Data converters and amplifying applications in +2V to +10V systems where low input bias • Sample and Hold current, low input capacitance and fast switching speed are desired. • Analog signal processing These MOSFET devices feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. The ALD1106/ ALD1116 are building blocks for differential amplifier input stages,
PIN CONFIGURATION
transmission gates, multiplexer applications, current sources and many precision analog circuits.
ALD1116 FEATURES DN1 1 8 DN2
• Low threshold voltage of 0.7V
G 2 7 G N1 N2
• Low input capacitance • Low Vos -- 2mV typical
SN1 3 6 SN2
• High input impedance -- 1014Ω typical • Negative current (IDS) temperature coefficient
V- 4 5 V+
• Enhancement-mode (normally off) • DC current gain 109
TOP VIEW
• Low input and output leakage currents
SAL, PAL PACKAGES
• RoHS compliant
ALD1106 ORDERING INFORMATION
(“L” suffix denotes lead-free (RoHS))
DN1 1 14 DN2 Operating Temperature Range* G 2 13 G N1 N2
0°C to +70°C 0°C to +70°C
SN1 3 12 SN2
8-Pin SOIC 8-Pin Plastic Dip Package Package
V- 4 11 V+
ALD1116SAL ALD1116PAL
DN4 5 10 DN3 G 6 9 G N4 N3
14-Pin SOIC 14-Pin Plastic Dip Package Package
SN4 7 8 SN3
ALD1106SBL ALD1106PBL
TOP VIEW SBL, PBL PACKAGES
* Contact factory for high temperature versions.
BLOCK DIAGRAMS ALD1106 ALD1116 V+ (11) V+ (5) DN1 (1) DN2 (14) DN3 (10) DN4 (5)
~
DN1 (1) DN2 (8)
~
GN1 (2) GN2 (13) GN3 (9) GN4 (6) GN1 (2) GN2 (7) V- (4) V- (4) S V- (4) N1 (3) SN2 (12) SN3 (8) SN4 (7) SN1 (3) SN2 (6)
©2021 Advanced Linear Devices, Inc., Vers. 2.2 www.aldinc.com 1 of 9
ALD1106/ALD1116 QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS
The ALD1106/ALD1116 are monolithic quad/dual N-channel enhance- • Precision current mirrors ment mode matched MOSFET transistor arrays intended for a broad • Precision current sources range of precision analog applications. The ALD1106/ALD1116 offer • Voltage choppers high input impedance and negative current temperature coefficient. The • Differential amplifier input stage transistor pairs are matched for minimum offset voltage and differential • Voltage comparator thermal response, and they are designed for precision analog switching • Data converters and amplifying applications in +2V to +10V systems where low input bias • Sample and Hold current, low input capacitance and fast switching speed are desired. • Analog signal processing These MOSFET devices feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. The ALD1106/ ALD1116 are building blocks for differential amplifier input stages,
PIN CONFIGURATION
transmission gates, multiplexer applications, current sources and many precision analog circuits.
ALD1116 FEATURES DN1 1 8 DN2
• Low threshold voltage of 0.7V
G 2 7 G N1 N2
• Low input capacitance • Low Vos -- 2mV typical
SN1 3 6 SN2
• High input impedance -- 1014Ω typical • Negative current (IDS) temperature coefficient
V- 4 5 V+
• Enhancement-mode (normally off) • DC current gain 109
TOP VIEW
• Low input and output leakage currents
SAL, PAL PACKAGES
• RoHS compliant
ALD1106 ORDERING INFORMATION
(“L” suffix denotes lead-free (RoHS))
DN1 1 14 DN2 Operating Temperature Range* G 2 13 G N1 N2
0°C to +70°C 0°C to +70°C
SN1 3 12 SN2
8-Pin SOIC 8-Pin Plastic Dip Package Package
V- 4 11 V+
ALD1116SAL ALD1116PAL
DN4 5 10 DN3 G 6 9 G N4 N3
14-Pin SOIC 14-Pin Plastic Dip Package Package
SN4 7 8 SN3
ALD1106SBL ALD1106PBL
TOP VIEW SBL, PBL PACKAGES
* Contact factory for high temperature versions.
BLOCK DIAGRAMS ALD1106 ALD1116 V+ (11) V+ (5) DN1 (1) DN2 (14) DN3 (10) DN4 (5)
~
DN1 (1) DN2 (8)
~
GN1 (2) GN2 (13) GN3 (9) GN4 (6) GN1 (2) GN2 (7) V- (4) V- (4) S V- (4) N1 (3) SN2 (12) SN3 (8) SN4 (7) SN1 (3) SN2 (6)
©2021 Advanced Linear Devices, Inc., Vers. 2.2 www.aldinc.com 1 of 9