Datasheet MBT3906DW1 (ON Semiconductor)
| Hersteller | ON Semiconductor |
| Beschreibung | Dual General Purpose Transistor |
| Seiten / Seite | 9 / 1 — www.onsemi.com. MARKING DIAGRAM. Features. SOT−363/SC−88. CASE 419B. … |
| Dateiformat / Größe | PDF / 354 Kb |
| Dokumentensprache | Englisch |
www.onsemi.com. MARKING DIAGRAM. Features. SOT−363/SC−88. CASE 419B. STYLE 1. ORDERING INFORMATION. MAXIMUM RATINGS. Rating. Symbol. Value
Modelllinie für dieses Datenblatt
Textversion des Dokuments
link to page 1 link to page 6 MBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in
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one package, this device is ideal for low−power surface mount applications where board space is at a premium.
MARKING DIAGRAM Features
• 6 hFE, 100−300 •
SOT−363/SC−88
Low VCE(sat), ≤ 0.4 V
CASE 419B
XX MG • Simplifies Circuit Design
STYLE 1
G • Reduces Board Space 1 • Reduces Component Count XX = Device Code • Available in 8 mm, 7−inch/3,000 Unit Tape and Reel M = Date Code • G = Pb−Free Package S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and (Note: Microdot may be in either location) PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
MAXIMUM RATINGS
package dimensions section on page 6 of this data sheet.
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −40 Vdc Collector−Base Voltage VCBO −40 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −200 mAdc Electrostatic Discharge ESD HBM Class 2 MM Class B Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
Total Package Dissipation (Note 1) PD 150 mW TA = 25°C Thermal Resistance, RqJA 833 °C/W Junction−to−Ambient Junction and Storage TJ, Tstg −55 to +150 °C Temperature Range 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2019 − Rev. 7 MBT3906DW1T1/D
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one package, this device is ideal for low−power surface mount applications where board space is at a premium.
MARKING DIAGRAM Features
• 6 hFE, 100−300 •
SOT−363/SC−88
Low VCE(sat), ≤ 0.4 V
CASE 419B
XX MG • Simplifies Circuit Design
STYLE 1
G • Reduces Board Space 1 • Reduces Component Count XX = Device Code • Available in 8 mm, 7−inch/3,000 Unit Tape and Reel M = Date Code • G = Pb−Free Package S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and (Note: Microdot may be in either location) PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
MAXIMUM RATINGS
package dimensions section on page 6 of this data sheet.
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −40 Vdc Collector−Base Voltage VCBO −40 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −200 mAdc Electrostatic Discharge ESD HBM Class 2 MM Class B Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
Total Package Dissipation (Note 1) PD 150 mW TA = 25°C Thermal Resistance, RqJA 833 °C/W Junction−to−Ambient Junction and Storage TJ, Tstg −55 to +150 °C Temperature Range 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2019 − Rev. 7 MBT3906DW1T1/D