Datasheet ZTX849 (Diodes)

NPN SILICON PLANAR MEDIUM POWER ZTX849 HIGH CURRENT TRANSISTOR ZTX849 ISSUE 2 – MARCH 94 ELECTRICAL CHARACTERISTICS (at T FEATURES amb = 25°C) * 5 Amps continuous current PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Up to 20 Amps peak current Base-Emitter VBE(on) 850 950 mV IC=5A, VCE=1V* * Very low saturation voltages Turn-On Voltage APPLICATIONS Static Forward hFE 100 200 IC=10mA, VCE=1V * LCD backlight converter C Current Transfer 100 200 300 IC=1A, VCE=1V* Ratio 100 170 I * Flash gun converters B E C=5A, VCE=1V* 30 65 IC=20A, VCE=1V* * Battery powered circuits E-Line Transition Frequency f * Motor drivers T 100 MHz IC=100mA, VCE=10V TO92 Compatible f=50MHz ABSOLUTE MAXIMUM RATINGS. Output Capacitance Cobo 75 pF VCB=10V, f=1MHz* PARAMETER SYMBOL VALUE UNIT Switching Times ton 45 ns IC=1A, IB!=100mA Col ector-Base Voltage V t 630 ns I CBO 80 V off B2=100mA, VCC=10V Collector-Emitter Voltage V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% CEO 30 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 20 A THERMAL CHARACTERISTICS Continuous Collector Current IC 5 A PARAMETER SYMBOL MAX. UNIT Practical Power Dissipation* Ptotp 1.58 W Thermal Resistance: Junction to Ambient R 150 °C/W Power Dissipation at T th(j-amb) amb=25°C Ptot 1.2 W Junction to Case Rth(j-case) 50 °C/W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Col ector-Base Breakdown V(BR)CBO 80 120 V IC=100µA Voltage ) 4.0 s 150 D.C. tt ) Col ector-Emitter Breakdown V(BR)CER 80 120 V IC=1µA, RB ≤1KΩ a /W t1 D=t1/tP Voltag (W °C - 3.0 Case te ce ( Col ector-Emitter Breakdown V(BR)CEO 30 40 V IC=10mA* 100 tion n tP Voltage ta ipa m s 2.0 peratu D=0.6 si iss e Emitter-Base Breakdown V(BR)EBO 6 8 V IE=100µA D re A 50 Voltage mbient t 1.0 em D=0.2 ower perature ermal R D=0.1 Collector Cut-Off Current ICBO 50 nA VCB=70V P h x T D=0.05 1 µA VCB=70V, Tamb=100°C a Single Pulse M 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector Cut-Off Current ICER 50 nA VCB=70V T -Temperature (°C) Pulse Width (seconds) R ≤1KΩ 1 µA VCB=70V, Tamb=100°C Emitter Cut-Off Current IEBO 10 nA VEB=6V
Derating curve Maximum transient thermal impedance
Collector-Emitter Saturation VCE(sat) 25 50 mV IC=0.5A, IB=20mA* Voltage 50 100 mV IC=1A, IB=20mA* 110 200 mV IC=2A, IB=20mA* 180 220 mV IC=5A, IB=200mA* Base-Emitter VBE(sat) 930 1050 mV IC=5A, IB=200mA* Saturation Voltage 3-292 3-291