Datasheet STP4NK50Z, STP4NK50ZFP, STD4NK50Z, STD4NK50Z-1 (STMicroelectronics) - 3
| Hersteller | STMicroelectronics |
| Beschreibung | N-CHANNEL 500V -2.4Ω -3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET |
| Seiten / Seite | 13 / 3 — STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1. ELECTRICAL … |
| Dateiformat / Größe | PDF / 681 Kb |
| Dokumentensprache | Englisch |
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1. ELECTRICAL CHARACTERISTICS. Symbol. Parameter. Test Conditions. Min. Typ. Max. Unit
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STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 ELECTRICAL CHARACTERISTICS
(TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 1 mA, VGS = 0 500 V Breakdown Voltage IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C 50 µA IGSS Gate-body Leakage VGS = ± 20V ±10 µA Current (VDS = 0) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50µA 3 3.75 4.5 V RDS(on) Static Drain-source On VGS = 10V, ID = 1.5 A 2.3 2.7 Ω Resistance DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS = 15 V, ID = 1.5 A 1.5 S Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 310 pF Coss Output Capacitance 49 pF C Reverse Transfer 10 pF rss Capacitance Coss eq. (3) Equivalent Output VGS = 0V, VDS = 0V to 400V 33 pF Capacitance SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 250 V, ID = 1.5 A 10 ns tr Rise Time RG = 4.7Ω VGS = 10 V 7 ns (Resistive Load see, Figure 3) Qg Total Gate Charge VDD = 400 V, ID = 3 A, 12 nC Qgs Gate-Source Charge VGS = 10 V 3 nC Q nC gd Gate-Drain Charge 7 SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off Delay Time VDD = 250 V, ID = 1.5 A 21 ns tf Fall Time RG = 4.7Ω VGS = 10 V 11 ns (Resistive Load see, Figure 3) tr(Voff) Off-voltage Rise Time VDD = 400V, ID = 3 A, 10 ns tf Fall Time RG = 4.7Ω, VGS = 10V 10 ns t 17 ns c Cross-over Time (Inductive Load see, Figure 5) SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 3 A ISDM (2) Source-drain Current (pulsed) 12 A VSD (1) Forward On Voltage ISD = 3 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 3 A, di/dt = 100A/µs 260 ns Qrr Reverse Recovery Charge VDD = 40 V, Tj = 150°C 935 nC IRRM Reverse Recovery Current (see test circuit, Figure 5) 7.2 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/13
(TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 1 mA, VGS = 0 500 V Breakdown Voltage IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C 50 µA IGSS Gate-body Leakage VGS = ± 20V ±10 µA Current (VDS = 0) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50µA 3 3.75 4.5 V RDS(on) Static Drain-source On VGS = 10V, ID = 1.5 A 2.3 2.7 Ω Resistance DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS = 15 V, ID = 1.5 A 1.5 S Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 310 pF Coss Output Capacitance 49 pF C Reverse Transfer 10 pF rss Capacitance Coss eq. (3) Equivalent Output VGS = 0V, VDS = 0V to 400V 33 pF Capacitance SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 250 V, ID = 1.5 A 10 ns tr Rise Time RG = 4.7Ω VGS = 10 V 7 ns (Resistive Load see, Figure 3) Qg Total Gate Charge VDD = 400 V, ID = 3 A, 12 nC Qgs Gate-Source Charge VGS = 10 V 3 nC Q nC gd Gate-Drain Charge 7 SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off Delay Time VDD = 250 V, ID = 1.5 A 21 ns tf Fall Time RG = 4.7Ω VGS = 10 V 11 ns (Resistive Load see, Figure 3) tr(Voff) Off-voltage Rise Time VDD = 400V, ID = 3 A, 10 ns tf Fall Time RG = 4.7Ω, VGS = 10V 10 ns t 17 ns c Cross-over Time (Inductive Load see, Figure 5) SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 3 A ISDM (2) Source-drain Current (pulsed) 12 A VSD (1) Forward On Voltage ISD = 3 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 3 A, di/dt = 100A/µs 260 ns Qrr Reverse Recovery Charge VDD = 40 V, Tj = 150°C 935 nC IRRM Reverse Recovery Current (see test circuit, Figure 5) 7.2 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/13