Datasheet FMMT717, FMMT718, FMMT720, FMMT722, FMMT723 (Diodes) - 3
Hersteller | Diodes |
Beschreibung | SOT23 PNP Silicon Power (Switching) Transistors |
Seiten / Seite | 4 / 3 — FMMT717. FMMT717. TYPICAL. CHARACTERISTICS. ELECTRICAL. CHARACTERISTICS. … |
Dateiformat / Größe | PDF / 438 Kb |
Dokumentensprache | Englisch |
FMMT717. FMMT717. TYPICAL. CHARACTERISTICS. ELECTRICAL. CHARACTERISTICS. (at. Tamb. =. 25°C. unless. otherwise. stated). 1. 0.8. +25°C. IC/IB=10
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FMMT717 FMMT717 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1 0.8 +25°C IC/IB=10 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 0.7 Collector-Base V 0.6 (BR)CBO -12 -35 V I Breakdown Voltage C=-100µA 100m 0.5 Collector-Emitter V(BR)CEO -12 -25 V IC=-10mA* 0.4 Breakdown Voltage 100°C 10m 0.3 25°C IC/IB=100 Emitter-Base V -55°C (BR)EBO -5 -8.5 V IE=-100µA IC/IB=50 0.2 IC/IB=30 Breakdown Voltage IC/IB=10 0.1 Collector Cut-Off ICBO -100 nA VCB=-10V 1m 0.0 Current 1m 10m 100m 1 10 1mA 10mA 100mA 1A 10A 100A Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector Current (A) Collector Current Collector Emitter ICES -100 nA VCES=-10V VCE(SAT) vs IC VCE(SAT) vs IC Cut-Off Current Collector-Emitter VCE(sat) -10 -17 mV IC=-0.1A, IB=-10mA* Saturation Voltage -100 -140 mV I 1.6 C=-1A, IB=-10mA* 1.6 100°C VCE=2V IC/IB=10 -110 -170 mV IC=-1.5A, IB=-50mA* 1.4 -180 -220 mV I 1.4 C=-2.5A, IB=-50mA* 450 1.2 1.2 Base-Emitter V 25°C BE(sat) -0.9 -1.0 V IC=-2.5A, IB=-50mA* 1.0 Saturation Voltage 1.0 -55°C 0.8 0.8 25°C Base-Emitter Turn-On VBE(on) -0.8 -1.0 V IC=-2.5A, VCE=-2V* 100°C -55°C 0.6 225 0.6 Voltage 0.4 0.4 Static Forward Current hFE 300 475 IC=-10mA, VCE=-2V* 0.2 0.2 Transfer 300 450 IC=-100mA, VCE=-2V* Ratio 180 275 I 0.0 0 0.0 C=-2.5A, VCE=-2V* 60 100 I 1mA 10mA 100mA 1A 10A 100A 1mA 10mA 100mA 1A 10A 100A C=-8A, VCE=-2V* 45 70 IC=-10A, VCE=-2V* Collector Current Collector Current Transition fT 80 110 MHz IC=-50mA, VCE=-10V Frequency f=100MHz hFE vs IC VBE(SAT) vs IC Output Capacitance Cobo 21 30 pF VCB=-10V, f=1MHz SINGLE PULSE TEST Tamb = 25 deg C Turn-On Time t(on) 70 ns VCC=-6V, IC=-2A 1.2 10 VCE=2V IB1=IB2=50mA Turn-Off Time t(off) 130 ns 1.0 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% -55°C 0.8 1.0 D.C. 1s 25°C 100ms 0.6 10ms 100°C 1ms 0.4 0.1 100µs 0.2 0.0 0.01 1mA 10mA 100mA 1A 10A 100A 0.1 1.0 10 100 Collector Current VCE (VOLTS) VBE(ON) vs IC Safe Operating Area 3 - 160 3 - 161