Datasheet IRF840L, SiHF840L (Vishay) - 2

IRF840L, SiHF840L
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62 °C/W Maximum Junction-to-Case (Drain) RthJC - 1.0
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.78 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 500 V, VGS = 0 V - - 25 Zero Gate Voltage Drain Current IDSS μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 4.8 A b - - 0.85 Ω Forward Transconductance gfs VDS = 50 V, ID = 4.8 A b 4.9 - - S
Dynamic
Input Capacitance Ciss V - 1300 - GS = 0 V, Output Capacitance Coss VDS = 25 V, - 310 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 120 - Total Gate Charge Qg - - 63 I Gate-Source Charge Qgs V D = 8 A, VDS = 400 V GS = 10 V - - 9.3 nC see fig. 6 and 13 b Gate-Drain Charge Qgd - - 32 Turn-On Delay Time td(on) - 14 - Rise Time tr V - 23 - DD = 250 V, ID = 8.0 A ns R Turn-Off Delay Time uo t g = 9.1 Ω, RD = 31 Ω, see fig. 10 b d(off) - 49 - Fall Time tf - 20 - Between lead, D Internal Drain Inductance LD - 4.5 - 6 mm (0.25") from package and center of nH G Internal Source Inductance LS die contact - 7.5 - S Gate Input Resistance Rg f = 1 MHz, open drain 0.6 - 2.8 Ω
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous Source-Drain Diode Current IS D - - 8.0 showing the integral reverse A G p - n junction diode Pulsed Diode Forward Current a ISM S - - 32 Body Diode Voltage VSD TJ = 25 °C, IS = 8 A, VGS = 0 V b - - 2.0 V Body Diode Reverse Recovery Time trr - 460 970 ns TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μs b Body Diode Reverse Recovery Charge Qrr - 4.2 8.9 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0901-Rev. D, 30-Aug-2021
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