Datasheet IRF840L, SiHF840L (Vishay)
| Hersteller | Vishay |
| Beschreibung | Power MOSFET |
| Seiten / Seite | 10 / 1 — IRF840L, SiHF840L. Power MOSFET. FEATURES. I2PAK (TO-262). Note. PRODUCT … |
| Dateiformat / Größe | PDF / 221 Kb |
| Dokumentensprache | Englisch |
IRF840L, SiHF840L. Power MOSFET. FEATURES. I2PAK (TO-262). Note. PRODUCT SUMMARY. DESCRIPTION. ORDERING INFORMATION
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Textversion des Dokuments
IRF840L, SiHF840L
www.vishay.com Vishay Siliconix
Power MOSFET
D
FEATURES I2PAK (TO-262)
• Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching G • Ease of paralleling Available • Simple drive requirements • Material categorization: for definitions of compliance S S D please see www.vishay.com/doc?99912 G N-Channel MOSFET
Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
PRODUCT SUMMARY
Please see the information / tables in this datasheet for details VDS (V) 500 RDS(on) (Ω) VGS = 10 V 0.85
DESCRIPTION
Qg max. (nC) 63 Third generation power MOSFETs from Vishay provide the Q designer with best combination of fast switching, gs (nC) 9.3 ruggedized device design, low on-resistance and Qgd (nC) 32 cost-effectiveness. Configuration Single The I2PAK (TO-262) is a power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance. The I2PAK (TO-262) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W.
ORDERING INFORMATION
Package I2PAK (TO-262) Lead (Pb)-free and Halogen-free SiHF840L-GE3 Lead (Pb)-free IRF840LPbF
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 V TC = 25 °C 8.0 Continuous Drain Current VGS at 10 V ID TC = 100 °C 5.1 A Pulsed Drain Current a IDM 32 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energy b EAS 510 mJ Repetitive Avalanche Current a IAR 8.0 A Repetitive Avalanche Energy a EAR 13 mJ TC = 25 °C 125 Maximum Power Dissipation PD W TC = 100 °C 50 Peak Diode Recovery dV/dt c dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Soldering Recommendations (Peak temperature) d for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 Ω, IAS = 8.0 A (see fig. 12) c. ISD ≤ 8.0 A, dI/dt ≤ 100 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S21-0901-Rev. D, 30-Aug-2021
1
Document Number: 91069 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Power MOSFET
D
FEATURES I2PAK (TO-262)
• Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching G • Ease of paralleling Available • Simple drive requirements • Material categorization: for definitions of compliance S S D please see www.vishay.com/doc?99912 G N-Channel MOSFET
Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
PRODUCT SUMMARY
Please see the information / tables in this datasheet for details VDS (V) 500 RDS(on) (Ω) VGS = 10 V 0.85
DESCRIPTION
Qg max. (nC) 63 Third generation power MOSFETs from Vishay provide the Q designer with best combination of fast switching, gs (nC) 9.3 ruggedized device design, low on-resistance and Qgd (nC) 32 cost-effectiveness. Configuration Single The I2PAK (TO-262) is a power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance. The I2PAK (TO-262) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W.
ORDERING INFORMATION
Package I2PAK (TO-262) Lead (Pb)-free and Halogen-free SiHF840L-GE3 Lead (Pb)-free IRF840LPbF
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 V TC = 25 °C 8.0 Continuous Drain Current VGS at 10 V ID TC = 100 °C 5.1 A Pulsed Drain Current a IDM 32 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energy b EAS 510 mJ Repetitive Avalanche Current a IAR 8.0 A Repetitive Avalanche Energy a EAR 13 mJ TC = 25 °C 125 Maximum Power Dissipation PD W TC = 100 °C 50 Peak Diode Recovery dV/dt c dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Soldering Recommendations (Peak temperature) d for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 Ω, IAS = 8.0 A (see fig. 12) c. ISD ≤ 8.0 A, dI/dt ≤ 100 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S21-0901-Rev. D, 30-Aug-2021
1
Document Number: 91069 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000