Datasheet 2N5911, 2N5912 (Calogic)
| Hersteller | Calogic |
| Beschreibung | Dual N-Channel JFET High Frequency Amplifier |
| Seiten / Seite | 2 / 1 — Dual N-Channel JFET. High Frequency Amplifier. 2N5911 / 2N5912. FEATURES. … |
| Dateiformat / Größe | PDF / 37 Kb |
| Dokumentensprache | Englisch |
Dual N-Channel JFET. High Frequency Amplifier. 2N5911 / 2N5912. FEATURES. ABSOLUTE MAXIMUM RATINGS. Tight Tracking
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Textversion des Dokuments
Dual N-Channel JFET High Frequency Amplifier
LLC
2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS
• (T
Tight Tracking
A = 25oC unless otherwise specified) •
Low Insertion Loss
• Gate-Drain or Gate-Source Voltage . -25V
Good Matching
Gate Current . 50mA Storage Temperature Range . -65oC to +200oC Operating Temperature Range . -55oC to +150oC
PIN CONFIGURATION
Lead Temperature (Soldering, 10sec) . +300oC
One Side Both Sides
Power Dissipation 367mW 500mW Derate above 25oC 3.0mW/oC 4.0mW/oC TO-99 TO-78
NOTE:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION Part Package Temperature Range
S2 D2 G2 C S1 2N5911-12 Hermetic T Hermetic O- TO9 - 9 78 -55oC to +150oC
CJ1
G1 D1 X2N5912 Sorted Chips in Carriers -55oC to +150oC
ELECTRICAL CHARACTERISTICS
(TA = 25oC unless otherwise specified)
SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS
-100 pA VGS = -15V, VDS = 0 IGSS Gate Reverse Current -250 nA TA = 150oC BVGSS Gate Reverse Breakdown Voltage -25 IG = -1µA, VDS = 0 V V GS(off) Gate-Source Cutoff Voltage -1 -5 VDS = 10V, ID = 1nA VGS Gate-Source Voltage -0.3 -4 VDG = 10V, ID = 5mA -100 pA IG Gate Operating Current -100 nA TA = 150oC IDSS Saturation Drain Current (Pulsewidth 300µs, duty cycle ≤3%) 7 40 mA VDS = 10V, VGS = 0V gfs Common-Source Forward Transconductance 5000 10,000 f = 1kHz gfs Common-Source Forward Transconductance (Note 1) 5000 10,000 µ f = 100MHz S gos Common-Source Output Conductance 100 f = 1kHz goss Common-Source Output Conductance (Note 1) 150 f = 100MHz VDG = 10V, ID = 5mA Ciss Common-Source Input Capacitance (Note 1) 5 pF f = 1MHz Crss Common-Source Reverse Transfer Capacitance (Note 1) 1.2 nV en Equivalent Short Circuit Input Noise Voltage (Note 1) 20 √ f = 10kHz Hz f = 10kHz NF Spot Noise Figure (Note 1) 1 dB RG = 100kΩ CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS013 REV B
LLC
2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS
• (T
Tight Tracking
A = 25oC unless otherwise specified) •
Low Insertion Loss
• Gate-Drain or Gate-Source Voltage . -25V
Good Matching
Gate Current . 50mA Storage Temperature Range . -65oC to +200oC Operating Temperature Range . -55oC to +150oC
PIN CONFIGURATION
Lead Temperature (Soldering, 10sec) . +300oC
One Side Both Sides
Power Dissipation 367mW 500mW Derate above 25oC 3.0mW/oC 4.0mW/oC TO-99 TO-78
NOTE:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION Part Package Temperature Range
S2 D2 G2 C S1 2N5911-12 Hermetic T Hermetic O- TO9 - 9 78 -55oC to +150oC
CJ1
G1 D1 X2N5912 Sorted Chips in Carriers -55oC to +150oC
ELECTRICAL CHARACTERISTICS
(TA = 25oC unless otherwise specified)
SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS
-100 pA VGS = -15V, VDS = 0 IGSS Gate Reverse Current -250 nA TA = 150oC BVGSS Gate Reverse Breakdown Voltage -25 IG = -1µA, VDS = 0 V V GS(off) Gate-Source Cutoff Voltage -1 -5 VDS = 10V, ID = 1nA VGS Gate-Source Voltage -0.3 -4 VDG = 10V, ID = 5mA -100 pA IG Gate Operating Current -100 nA TA = 150oC IDSS Saturation Drain Current (Pulsewidth 300µs, duty cycle ≤3%) 7 40 mA VDS = 10V, VGS = 0V gfs Common-Source Forward Transconductance 5000 10,000 f = 1kHz gfs Common-Source Forward Transconductance (Note 1) 5000 10,000 µ f = 100MHz S gos Common-Source Output Conductance 100 f = 1kHz goss Common-Source Output Conductance (Note 1) 150 f = 100MHz VDG = 10V, ID = 5mA Ciss Common-Source Input Capacitance (Note 1) 5 pF f = 1MHz Crss Common-Source Reverse Transfer Capacitance (Note 1) 1.2 nV en Equivalent Short Circuit Input Noise Voltage (Note 1) 20 √ f = 10kHz Hz f = 10kHz NF Spot Noise Figure (Note 1) 1 dB RG = 100kΩ CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS013 REV B