Datasheet 2N5401 (ON Semiconductor) - 2

2N5401
Amplifier Transistor
Features
• Collector-Emitter Voltage: VCEO = 150V
• Collector Dissipation: PC (max) = 625mW
• Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base)
TO-92 1 1. Emitter 2. Base 3. Collector Ordering Information
Part Number Top Mark Package Packing Method Pack Quantity 2N5401YBU 2N5401 TO-92 3L Bulk 10000 2N5401YTA 2N5401 TO-92 3L Ammo 2000 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V -600 mA -55 to 150 C IC
TJ, TSTG Collector Current
Operating and Storage Junction Temperature Range © 1999 Fairchild Semiconductor Corporation
2N5401 Rev. 2.1 www.fairchildsemi.com
1 2N5401 — Amplifier Transistor May 2016