Datasheet IRF510 (Vishay) - 2

IRF510
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - °C/W Maximum junction-to-case (drain) RthJC - 3.5
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID =3.4 A b - - 0.54 Ω Forward transconductance gfs VDS = 50 V, ID = 3.4 A b 1.3 - - S
Dynamic
Input capacitance Ciss V - 180 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 81 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 15 - Total gate charge Qg I - - 8.3 D = 5.6 A, VDS = 80 V Gate-source charge Qgs VGS = 10 V VDS = 10 V, - - 2.3 nC see fig. 6 and fig. 13 b Gate-drain charge Qgd - - 3.8 Turn-on delay time td(on) - 6.9 - Rise time tr V - 16 - DD = 50 V, ID = 5.6 A ns R Turn-off delay time t g = 24 Ω, RD = 8.4 Ω, see fig. 10 b d(off) - 15 - Fall time tf - 9.4 - Gate input resistance Rg f = 1 MHz, open drain 2.5 - 11.6 Ω Between lead, D Internal drain inductance LD - 4.5 - 6 mm (0.25") from package and center of nH G die contact Internal source inductance LS - 7.5 - S
Drain-Source Body Diode Characteristics
D Continuous source-drain diode current I MOSFET symbol S - - 5.6 showing the A integral reverse G Pulsed diode forward current a ISM p - n junction diode - - 20 S Body diode voltage VSD TJ = 25 °C, IS = 5.6 A, VGS = 0 V b - - 2.5 V Body diode reverse recovery time trr - 100 200 ns TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 0.44 0.88 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0819-Rev. D, 02-Aug-2021
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