Datasheet 2N6282 (Inchange Semiconductor)

isc Silicon NPN Darlingtion Power Transistor 2N6282 DESCRIPTION
·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = 10 Adc ·Col ector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) ·Complement to type 2N6285
APPLICATIONS
·Intended for general purpose amplifier and low frequency switching applications, such as linear and switching indu- strial equipment.
ABSOLUTE MAXIMUM RATINGS(TC=25
℃
) SYMBOL PARAMETER VALUE UNIT
VCBO Col ector-Base Voltage 60 V VCEO Col ector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Col ector Current -Continuous 20 A ICP Col ector Current-Peak 40 A IB Base Current 0.5 A PC Col ector Power Dissipation@TC=25℃ 160 W Tj Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃
THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Rth j-c ThermalResistance, Junction to Case 1.09 ℃/W
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Document Outline isc Silicon NPN Darlingtion Power Transistor DESCRIPTION APPLICATIONS ABSOLUTE MAXIMUM RATINGS(TC=25℃) THERMAL CHARACTERISTICS isc Silicon NPN Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS