Datasheet MJE210 (ON Semiconductor) - 2

MJE210 MJE210
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.)
• Complement to MJE200 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO Parameter
Collector-Base Voltage Value
-40 Units
V -25 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -8 V IC Collector Current -5 A PC Collector Dissipation (TC=25°C) 15 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO Parameter
Collector-Emitter Breakdown Voltage Test Condition
IC = -10mA, IB = 0 ICBO Collector Cut-off Current VCB = -40V, IE = 0
VCB = -40V, IE =0 @ TJ = 125°C IEBO Emitter Cut-off Current VBE = -8V, IC = 0 hFE1
hFE2
hFE3 DC Current Gain VCE = -1V, IC = -500mA
VCE = -1V, IC = -2A
VCE = -2V, IC = -5A VCE(sat) Collector-Emitter Saturation Voltage Min.
-25 70
45
10 Max. Units
V -100
-100 nA
µA -100 nA 180 IC = -500mA, IB = -50mA
IC = -2A, IC = -200mA
IC = -5A, IB = -1A -0.3
-0.75
-1.8 V
V
V
V VBE(sat) Base-Emitter Saturation Voltage IC = -5A, IB = -1A -2.5 VBE(on) Base-Emitter ON Voltage VCE = -1V, IC = -2A -1.6 fT Current Gain Bandwidth Product VCE = -10V, IC = -100mA Cob Output Capacitance VCB = -10V, IE = 0, f = 1MHz ©2001 Fairchild Semiconductor Corporation 65 V
MHz 120 pF Rev. A1, February 2001