Datasheet MBR2030CTLG (ON Semiconductor)

MBR2030CTLG Switch-mode Dual Schottky Power Rectifier
Features and Benefits www.onsemi.com
• Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C)
SCHOTTKY BARRIER
• High Junction Temperature
RECTIFIER
• High dv/dt Capability •
20 AMPERES, 30 VOLTS
Excellent Ability to Withstand Reverse Avalanche Energy Transients • Low Power Loss/High Efficiency • High Surge Capacity 1 • 175°C Operating Junction Temperature 2, 4 • 3 20 A Total (10 A Per Diode Leg) • This Device is Pb−Free and is RoHS Compliant*
Applications MARKING
•
DIAGRAM
Power Supply − Output Rectification 4 • Power Management − ORING • Instrumentation
TO−220 Mechanical Characteristics
AYWW
CASE 221A
• B2030LG Case: Epoxy, Molded
STYLE 6
AKA • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight: 1.9 Grams (Approximately) 1 • 2 Finish: All External Surfaces Corrosion Resistant and Terminal 3 Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Sec A = Assembly Location • ESD Rating: Human Body Model 3B Y = Year WW = Work Week Machine Model C B2030L = Device Code G = Pb−Free Package AKA = Diode Polarity
ORDERING INFORMATION Device Package Shipping
MBR2030CTLG TO−220 50 Units/Rail (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
January, 2015 − Rev. 5 MBR2030CTL/D