Datasheet Si3457CDV (Vishay)
| Hersteller | Vishay |
| Beschreibung | P-Channel 30 V (D-S) MOSFET |
| Seiten / Seite | 11 / 1 — Si3457CDV. P-Channel 30 V (D-S) MOSFET. FEATURES. TSOP-6 Single. … |
| Dateiformat / Größe | PDF / 328 Kb |
| Dokumentensprache | Englisch |
Si3457CDV. P-Channel 30 V (D-S) MOSFET. FEATURES. TSOP-6 Single. APPLICATIONS. Marking code:. PRODUCT SUMMARY. ORDERING INFORMATION
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Si3457CDV
www.vishay.com Vishay Siliconix
P-Channel 30 V (D-S) MOSFET FEATURES TSOP-6 Single
S • TrenchFET® power MOSFET 4 D • Material categorization: 5 D for definitions of compliance please see 6 www.vishay.com/doc?99912 Available 3
APPLICATIONS
G (4) S 2 • Load switch D 1 D Top View
Marking code:
AT (3) G
PRODUCT SUMMARY
VDS (V) -30 RDS(on) max. () at VGS = -10 V 0.074 RDS(on) max. () at VGS = -4.5 V 0.113 Qg typ. (nC) 5.1 (1, 2, 5, 6) D ID (A) a -5.1 P-Channel MOSFET Configuration Single
ORDERING INFORMATION
Package TSOP-6 Lead (Pb)-free Si3457CDV-T1-E3 Lead (Pb)-free and halogen-free Si3457CDV-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -30 V Gate-source voltage VGS ± 20 TC = 25 °C -5.1 TC = 70 °C -4.1 Continuous drain current (TJ = 150 °C) ID TA = 25 °C -4.1 b, c TA = 70 °C -3.3 b, c A Pulsed drain current IDM -20 TC = 25 °C -2.5 Continuous source-drain diode current IS TA = 25 °C -1.67 b, c TC = 25 °C 3 TC = 70 °C 2 Maximum power dissipation PD W TA = 25 °C 2 b, c TA = 70 °C 1.3 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b, d t 5 s RthJA 55 62.5 °C/W Maximum junction-to-foot (drain) Steady state RthJF 34 41
Notes
a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 110 °C/W SO9-0131-Rev. B, 02-Feb-09
1
Document Number: 68602 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
P-Channel 30 V (D-S) MOSFET FEATURES TSOP-6 Single
S • TrenchFET® power MOSFET 4 D • Material categorization: 5 D for definitions of compliance please see 6 www.vishay.com/doc?99912 Available 3
APPLICATIONS
G (4) S 2 • Load switch D 1 D Top View
Marking code:
AT (3) G
PRODUCT SUMMARY
VDS (V) -30 RDS(on) max. () at VGS = -10 V 0.074 RDS(on) max. () at VGS = -4.5 V 0.113 Qg typ. (nC) 5.1 (1, 2, 5, 6) D ID (A) a -5.1 P-Channel MOSFET Configuration Single
ORDERING INFORMATION
Package TSOP-6 Lead (Pb)-free Si3457CDV-T1-E3 Lead (Pb)-free and halogen-free Si3457CDV-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -30 V Gate-source voltage VGS ± 20 TC = 25 °C -5.1 TC = 70 °C -4.1 Continuous drain current (TJ = 150 °C) ID TA = 25 °C -4.1 b, c TA = 70 °C -3.3 b, c A Pulsed drain current IDM -20 TC = 25 °C -2.5 Continuous source-drain diode current IS TA = 25 °C -1.67 b, c TC = 25 °C 3 TC = 70 °C 2 Maximum power dissipation PD W TA = 25 °C 2 b, c TA = 70 °C 1.3 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b, d t 5 s RthJA 55 62.5 °C/W Maximum junction-to-foot (drain) Steady state RthJF 34 41
Notes
a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 110 °C/W SO9-0131-Rev. B, 02-Feb-09
1
Document Number: 68602 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000