Datasheet IRF640, SiHF640 (Vishay) - 4

IRF640, SiHF640
www.vishay.com Vishay Siliconix 20 150 °C 16 25 °C 101 12 ain Current (A) ain Current (A) 8 erse Dr v , Dr I D , Re 4 100 I SD V = 0 V GS 0 0.50 0.70 0.90 1.10 1.30 1.50 25 50 75 100 125 150 91036_07 VSD, Source-to-Drain Voltage (V) 91036_09 TC, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature
RD 103 V Operation in this area limited DS 5 by RDS(on) V 2 GS D.U.T. 102 RG 10 µs + 5 - VDD 2 100 µs 10 V 10 1 ms Pulse width ≤ 1 µs 5 ain Current (A) Duty factor ≤ 0.1 % 2 10 ms , Dr I D 1
Fig. 10a - Switching Time Test Circuit
5 T = 25
°
C C T = 150
°
C J 2 VDS Single Pulse 0.1 90 % 2 5 2 5 2 5 2 5 0.1 1 10 102 103 91036_08 VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10 % VGS t t t t d(on) r d(off) f
Fig. 10b - Switching Time Waveforms
10 ) thJC 1 0 − 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 Single Pulse t1 mal Response (Z 10-2 (Thermal Response) t2 Ther Notes: 1. Duty Factor, D = t /t 1 2 2. Peak T = P x Z + T j DM thJC C 10-3 10-5 10-4 10-3 10-2 0.1 1 10 91036_11 t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S15-2667-Rev. C, 16-Nov-15
4
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