Preliminary Datasheet EPC2305 (Efficient Power Conversion)
| Hersteller | Efficient Power Conversion |
| Beschreibung | Enhancement Mode Power Transistor |
| Seiten / Seite | 8 / 1 — eGaN® FET DATASHEET. EPC2305 – Enhancement Mode Power Transistor. … |
| Dateiformat / Größe | PDF / 1.2 Mb |
| Dokumentensprache | Englisch |
eGaN® FET DATASHEET. EPC2305 – Enhancement Mode Power Transistor. EFFICIENT POWER CONVERSION. Preliminar. HAL
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Textversion des Dokuments
eGaN® FET DATASHEET
EPC2305
EPC2305 – Enhancement Mode Power Transistor D
VDS , 150 V
y
R
G EFFICIENT POWER CONVERSION
DS(on) , 2.2 mΩ typ
Preliminar S HAL General Description
The EPC2305 is a 150 V eGaN® power transistor in a low inductance 3 x 5 mm QFN package with exposed top for excellent thermal management.
EPC2305 XYYWW XXXX
The thermal resistance to case top is ~0.2 °C/W, resulting in excel ent thermal behavior and easy cooling. The device features an enhanced PQFN “Thermal-Max” package. The exposed top enhances top-side thermal management and the side-wettable flanks guarantee that the complete side-pad
EPC2305
surface is wetted with solder during the reflow soldering process, which protects the copper and Package size: 3 x 5 mm al ows soldering to occur on this external flank area for easy optical inspection.
Features
Compared to a Si MOSFET, the footprint of 15 mm2 is less than half of the size of the best-in-class • 150 V Si MOSFET with similar R • 2.2 mΩ typical DS(on) and voltage rating, QG and QGD are significantly smaller and QRR is 0. This results in lower switching losses and lower gate driver losses. In summary, EPC2305 al ows the • 3 x 5 mm QFN Package highest power density due to enhanced efficiency, smal er size, and higher switching frequency for
Applications
smaller inductor and fewer capacitors. • High frequency DC/DC • AC/DC Chargers and Adaptors The EPC2305 enables designers to improve efficiency and save space. The excel ent thermal behavior • BLDC Motor Drive enables easier and lower cost cooling. The ultra-low capacitance and zero reverse recovery of the • eMobility Motor drives eGaN® FET enables efficient operation in many topologies. Performance is further enhanced due to • Solar Optimizer & MPPT the smal , low inductance footprint. • Synchronous Rectification for chargers, adaptors, power supplies
Application Notes: Questions:
• Class D Audio • Easy-to-use and reliable gate, Gate Drive ON = 5 V typical, • Fast charging for phone & notebook, gaming PC OFF = 0 V (negative voltage not needed) • DC/DC and chargers for eMobility, power tools, • Top of FET is electrically connected to source vacuum cleaners
Benefits Maximum Ratings
• Ultra High Efficiency
PARAMETER VALUE UNIT
• No Reverse Recovery Drain-to-Source Voltage (Continuous) 150 • Ultra Low QG VDS V Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150 °C) 180 • Small Footprint Continuous (TA = 25°C) 80 • Excellent Thermal ID A Pulsed (25°C, TPULSE = 300 µs) 329 Gate-to-Source Voltage 6 VGS V Scan QR code or click Gate-to-Source Voltage -4 link below for more TJ Operating Temperature –40 to 150 information including °C TSTG Storage Temperature –40 to 150 reliability reports, device models, demo boards!
https://l.ead.me/EPC2305
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 1
EPC2305
EPC2305 – Enhancement Mode Power Transistor D
VDS , 150 V
y
R
G EFFICIENT POWER CONVERSION
DS(on) , 2.2 mΩ typ
Preliminar S HAL General Description
The EPC2305 is a 150 V eGaN® power transistor in a low inductance 3 x 5 mm QFN package with exposed top for excellent thermal management.
EPC2305 XYYWW XXXX
The thermal resistance to case top is ~0.2 °C/W, resulting in excel ent thermal behavior and easy cooling. The device features an enhanced PQFN “Thermal-Max” package. The exposed top enhances top-side thermal management and the side-wettable flanks guarantee that the complete side-pad
EPC2305
surface is wetted with solder during the reflow soldering process, which protects the copper and Package size: 3 x 5 mm al ows soldering to occur on this external flank area for easy optical inspection.
Features
Compared to a Si MOSFET, the footprint of 15 mm2 is less than half of the size of the best-in-class • 150 V Si MOSFET with similar R • 2.2 mΩ typical DS(on) and voltage rating, QG and QGD are significantly smaller and QRR is 0. This results in lower switching losses and lower gate driver losses. In summary, EPC2305 al ows the • 3 x 5 mm QFN Package highest power density due to enhanced efficiency, smal er size, and higher switching frequency for
Applications
smaller inductor and fewer capacitors. • High frequency DC/DC • AC/DC Chargers and Adaptors The EPC2305 enables designers to improve efficiency and save space. The excel ent thermal behavior • BLDC Motor Drive enables easier and lower cost cooling. The ultra-low capacitance and zero reverse recovery of the • eMobility Motor drives eGaN® FET enables efficient operation in many topologies. Performance is further enhanced due to • Solar Optimizer & MPPT the smal , low inductance footprint. • Synchronous Rectification for chargers, adaptors, power supplies
Application Notes: Questions:
• Class D Audio • Easy-to-use and reliable gate, Gate Drive ON = 5 V typical, • Fast charging for phone & notebook, gaming PC OFF = 0 V (negative voltage not needed) • DC/DC and chargers for eMobility, power tools, • Top of FET is electrically connected to source vacuum cleaners
Benefits Maximum Ratings
• Ultra High Efficiency
PARAMETER VALUE UNIT
• No Reverse Recovery Drain-to-Source Voltage (Continuous) 150 • Ultra Low QG VDS V Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150 °C) 180 • Small Footprint Continuous (TA = 25°C) 80 • Excellent Thermal ID A Pulsed (25°C, TPULSE = 300 µs) 329 Gate-to-Source Voltage 6 VGS V Scan QR code or click Gate-to-Source Voltage -4 link below for more TJ Operating Temperature –40 to 150 information including °C TSTG Storage Temperature –40 to 150 reliability reports, device models, demo boards!
https://l.ead.me/EPC2305
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 1