Datasheet IRF1010N (International Rectifier) - 3
| Hersteller | International Rectifier |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 8 / 3 — Fig 1. Fig 2. Fig 3. Fig 4 |
| Dateiformat / Größe | PDF / 222 Kb |
| Dokumentensprache | Englisch |
Fig 1. Fig 2. Fig 3. Fig 4
Modelllinie für dieses Datenblatt
Textversion des Dokuments
IRF1010N 1000 1000 VGS VGS TOP 15V 15V 10V 10V 8.0V 8.0V 7.0V TOP 7.0V 6.0V 6.0V 5.5V 5.5V 5.0V 5.0V BOTTOM 4.5V BOTTOM 4.5V 100 100 4.5V 4.5V 10 10 D I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) 20µs PULSE WIDTH 20µs PULSE WIDTH T = 25 J °C T = 175 J °C 1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 100 2.5 ID = 85A T = 25 C ° J 2.0 T = 175 C ° J 1.5 10 1.0 (Normalized) 0.5 I , Drain-to-Source Current (A) D V = 25V DS DS(on) 20µs PULSE WIDTH V = 10V R , Drain-to-Source On Resistance GS 1 0.0 4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V , Gate-to-Source Voltage (V) ° GS T , Junction Temperature( C) J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 100 2.5 ID = 85A T = 25 C ° J 2.0 T = 175 C ° J 1.5 10 1.0 (Normalized) 0.5 I , Drain-to-Source Current (A) D V = 25V DS DS(on) 20µs PULSE WIDTH V = 10V R , Drain-to-Source On Resistance GS 1 0.0 4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V , Gate-to-Source Voltage (V) ° GS T , Junction Temperature( C) J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3