Datasheet HUF75652G3 (ON Semiconductor) - 10

HerstellerON Semiconductor
BeschreibungMOSFET – Power, N-Channel, Ultrafet 100 V, 75 A, 8 mW
Seiten / Seite12 / 10 — HUF75652G3. SPICE Thermal Model. JUNCTION. RTHERM1. CTHERM1. RTHERM2. …
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DokumentenspracheEnglisch

HUF75652G3. SPICE Thermal Model. JUNCTION. RTHERM1. CTHERM1. RTHERM2. CTHERM2. RTHERM3. CTHERM3. SABER Thermal Model. RTHERM4. CTHERM4. RTHERM5

HUF75652G3 SPICE Thermal Model JUNCTION RTHERM1 CTHERM1 RTHERM2 CTHERM2 RTHERM3 CTHERM3 SABER Thermal Model RTHERM4 CTHERM4 RTHERM5

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Textversion des Dokuments

HUF75652G3 SPICE Thermal Model th JUNCTION
REV 1April 1999 HUF75652T CTHERM1 th 6 9.75e−3
RTHERM1 CTHERM1
CTHERM2 6 5 3.90e−2 CTHERM3 5 4 2.50e−2 CTHERM4 4 3 2.95e−2
6
CTHERM5 3 2 6.55e−2 CTHERM6 2 tl 12.55 RTHERM1 th 6 1.96e−3
RTHERM2 CTHERM2
RTHERM2 6 5 4.89e−3 RTHERM3 5 4 1.38e−2 RTHERM4 4 3 7.73e−2
5
RTHERM5 3 2 1.17e−1 RTHERM6 2 tl 1.55e−2
RTHERM3 CTHERM3 SABER Thermal Model
SABER thermal model HUF75652T
4
template thermal_model th tl thermal_c th, tl {
RTHERM4 CTHERM4
ctherm.ctherm1 th 6 = 9.75e−3 ctherm.ctherm2 6 5 = 3.90e−2 ctherm.ctherm3 5 4 = 2.50e−2 ctherm.ctherm4 4 3 = 2.95e−2
3
ctherm.ctherm5 3 2 = 6.55e−2 ctherm.ctherm6 2 tl = 12.55
RTHERM5 CTHERM5
rtherm.rtherm1 th 6 = 1.96e−3 rtherm.rtherm2 6 5 = 4.89e−3 rtherm.rtherm3 5 4 = 1.38e−2 rtherm.rtherm4 4 3 = 7.73e−2
2
rtherm.rtherm5 3 2 = 1.17e−1 rtherm.rtherm6 2 tl = 1.55e−2 }
RTHERM6 CTHERM6 tl CASE
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