Datasheet IXTA44P15T, IXTP44P15T, IXTQ44P15T, IXTH44P15T (IXYS) - 5

IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T Fig. 7. Input Admittance Fig. 8. Transconductance
-50 70 TJ = - 40ºC 60 T -40 J = 125ºC 25ºC 25ºC - 40ºC 50 125ºC es -30 ens 40 per m iem A - - S 30 -20 ID f sg 20 -10 10 0 0 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 VGS - Volts ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge
-140 -10 -9 VDS = - 75V -120 I D = - 22A -8 I G = -1mA -100 -7 s re -6 -80 lts o pe V m -5 - -60 - A GSV -4 IS TJ = 125ºC -40 -3 TJ = 25ºC -2 -20 -1 0 0 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 0 20 40 60 80 100 120 140 160 180 VSD - Volts QG - NanoCoulombs
Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area
100,000 - 1000 f = 1 MHz RDS(on) Limit s - 100 rad 25µs a 10,000 F 100µs Ciss ico es P per - 10 1ms ce - m n A - cita Coss ID 1,000 pa 10ms a C - 1 100ms TJ = 150ºC Crss DC TC = 25ºC Single Pulse 100 - 0.1 0 -5 -10 -15 -20 -25 -30 -35 -40 1 - -10 - 100 - 1000 VDS - Volts VDS - Volts © 2013 IXYS CORPORATION, All Rights Reserved