Datasheet BSS123 (ON Semiconductor) - 2
| Hersteller | ON Semiconductor |
| Beschreibung | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Seiten / Seite | 7 / 2 — BSS123. ABSOLUTE MAXIMUM RATINGS. Symbol. Parameter. Ratings. Unit. … |
| Dateiformat / Größe | PDF / 202 Kb |
| Dokumentensprache | Englisch |
BSS123. ABSOLUTE MAXIMUM RATINGS. Symbol. Parameter. Ratings. Unit. THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS
Modelllinie für dieses Datenblatt
Textversion des Dokuments
link to page 3 link to page 3 link to page 3 link to page 3 link to page 3
BSS123 ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted.
Symbol Parameter Ratings Unit
VDSS Drain−Source Voltage 100 V VGSS Gate−Source Voltage ±20 ID Drain Current – Continuous (Note 1) 0.17 A Drain Current – Pulsed (Note 1) 0.68 PD Maximum Power Dissipation (Note 1) 0.36 W Derate Above 25°C 2.8 mW/°C TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C TL Maximum Lead Temperature for Soldering Purposes, 1/16” from Case 300 for 10 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
TA = 25°C unless otherwise noted.
Symbol Parameter Ratings Unit
RJA Thermal Resistance, Junction−to−Ambient (Note 1) 350 °C/W
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise noted.
Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 A 100 − − V BV Breakdown Voltage Temperature I − 97 − mV/°C DSS D = 250 μA, Referenced to T Coefficient 25°C J IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V − − 1 A VDS = 100 V, VGS = 0 V, − − 60 TJ = 125°C VDS = 20 V, VGS = 0 V − − 10 nA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V − − ±50 nA
ON CHARACTERISTICS
(Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 0.8 1.7 2 V V Gate Threshold Voltage Temperature I GS(th) D = 1 mA, Referenced to 25°C − –2.7 − mV/°C Coefficient TJ RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 0.17 A − 1.2 6 VGS = 4.5 V, ID = 0.17 A − 1.3 10 VGS = 10 V, ID = 0.17 A, − 2.2 12 TJ = 125°C ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 0.68 − − A gFS Forward Transconductance VDS = 10 V, ID = 0.17 A 0.08 0.8 − S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, − 73 − pF f = 1.0 MHz Coss Output Capacitance − 7 − Crss Reverse Transfer Capacitance − 3.4 − RG Gate Resistance VGS = 15 mV, f = 1.0 MHz − 2.2 −
www.onsemi.com 2
BSS123 ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted.
Symbol Parameter Ratings Unit
VDSS Drain−Source Voltage 100 V VGSS Gate−Source Voltage ±20 ID Drain Current – Continuous (Note 1) 0.17 A Drain Current – Pulsed (Note 1) 0.68 PD Maximum Power Dissipation (Note 1) 0.36 W Derate Above 25°C 2.8 mW/°C TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C TL Maximum Lead Temperature for Soldering Purposes, 1/16” from Case 300 for 10 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
TA = 25°C unless otherwise noted.
Symbol Parameter Ratings Unit
RJA Thermal Resistance, Junction−to−Ambient (Note 1) 350 °C/W
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise noted.
Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 A 100 − − V BV Breakdown Voltage Temperature I − 97 − mV/°C DSS D = 250 μA, Referenced to T Coefficient 25°C J IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V − − 1 A VDS = 100 V, VGS = 0 V, − − 60 TJ = 125°C VDS = 20 V, VGS = 0 V − − 10 nA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V − − ±50 nA
ON CHARACTERISTICS
(Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 0.8 1.7 2 V V Gate Threshold Voltage Temperature I GS(th) D = 1 mA, Referenced to 25°C − –2.7 − mV/°C Coefficient TJ RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 0.17 A − 1.2 6 VGS = 4.5 V, ID = 0.17 A − 1.3 10 VGS = 10 V, ID = 0.17 A, − 2.2 12 TJ = 125°C ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 0.68 − − A gFS Forward Transconductance VDS = 10 V, ID = 0.17 A 0.08 0.8 − S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, − 73 − pF f = 1.0 MHz Coss Output Capacitance − 7 − Crss Reverse Transfer Capacitance − 3.4 − RG Gate Resistance VGS = 15 mV, f = 1.0 MHz − 2.2 −
www.onsemi.com 2