Datasheet NDS9948 (Fairchild)

NDS9948 January 2010 NDS9948 Dual 60V P-Channel PowerTrench
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MOSFET General Description Features
This P-Channel MOSFET is a rugged gate version of • –2.3 A, –60 V RDS(ON) = 250 mΩ @ VGS = –10 V Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management RDS(ON) = 500 mΩ @ VGS = –4.5 V applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). • Low gate charge (9nC typical)
Applications
• Fast switching speed • Power management • High performance trench technology for extremely • Load switch low RDS(ON) • Battery protection • High power and current handling capability
DD1 5 4 DD1 DD2 6 Q1 3 D D2 7 2 G1 SO-8 Q2 S1 G 8 1 G2 S S2 S
Pin 1
SO-8 S Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –60 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) –2.3 A – Pulsed –10 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W (Note 1c) 135 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity
NDS9948 NDS9948 13’’ 12mm 2500 units 2010 Fairchild Semiconductor Corporation NDS9948 Rev B1(W)