Datasheet IRL3103PbF (International Rectifier) - 4
| Hersteller | International Rectifier |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 10 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Dateiformat / Größe | PDF / 198 Kb |
| Dokumentensprache | Englisch |
Fig 5. Fig 6. Fig 7. Fig 8
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IRL3103PbF 3000 15 VGS = 0V, f = 1MHz ID = 34A C = C + C C SHORTED iss gs gd , ds C = C 2500 rss gd C = C + C oss ds gd 12 V = 24V DS tage (V) V = 15V DS 2000 Ciss 9 1500 Coss 6 1000 C, Capacitance (pF) 3 500 GS Crss V , Gate-to-Source Vol FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 100 0 10 20 30 40 V , Drain-to-Source Voltage (V) DS Q , Total Gate Charge (nC) G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A( 100 tn T = 175 C e J ° rr 100 u C ecr 10 uo 100µsec S-ot-ni 10 ar 1 T = 25 C J ° D 1msec , I , Reverse Drain Current (A) SD I D Tc = 25°C Tj = 175°C 10msec V = 0 V GS Single Pulse 0.1 1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 1 10 100 V ,Source-to-Drain Voltage (V) SD VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A( 100 tn T = 175 C e J ° rr 100 u C ecr 10 uo 100µsec S-ot-ni 10 ar 1 T = 25 C J ° D 1msec , I , Reverse Drain Current (A) SD I D Tc = 25°C Tj = 175°C 10msec V = 0 V GS Single Pulse 0.1 1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 1 10 100 V ,Source-to-Drain Voltage (V) SD VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com