Datasheet BAV99 (Nexperia)
| Hersteller | Nexperia |
| Beschreibung | High-speed switching diode |
| Seiten / Seite | 10 / 1 — BAV99. High-speed switching diode. 1 July 2022. Product data sheet. 1. … |
| Revision | 01072022 |
| Dateiformat / Größe | PDF / 203 Kb |
| Dokumentensprache | Englisch |
BAV99. High-speed switching diode. 1 July 2022. Product data sheet. 1. General description. 2. Features and benefits
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BAV99 High-speed switching diode 1 July 2022 Product data sheet 1. General description
High-speed switching diode, encapsulated in a smal SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• High switching speed: trr ≤ 4 ns • Low capacitance: Cd ≤ 1.5 pF • Low leakage current • Reverse voltage: VR ≤ 100 V • Small SMD plastic packages
3. Applications
• High-speed switching • Reverse polarity protection • General-purpose switching
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode
IR reverse current VR = 80 V; Tamb = 25 °C - - 0.5 µA VR reverse voltage - - 100 V trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; - - 4 ns RL = 100 Ω; Tamb = 25 °C Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents
High-speed switching diode, encapsulated in a smal SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• High switching speed: trr ≤ 4 ns • Low capacitance: Cd ≤ 1.5 pF • Low leakage current • Reverse voltage: VR ≤ 100 V • Small SMD plastic packages
3. Applications
• High-speed switching • Reverse polarity protection • General-purpose switching
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode
IR reverse current VR = 80 V; Tamb = 25 °C - - 0.5 µA VR reverse voltage - - 100 V trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; - - 4 ns RL = 100 Ω; Tamb = 25 °C Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents