Datasheet IRLR8743PbF, IRLU8743PbF (Infineon) - 4
| Hersteller | Infineon |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 12 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Revision | 01_01 |
| Dateiformat / Größe | PDF / 387 Kb |
| Dokumentensprache | Englisch |
Fig 5. Fig 6. Fig 7. Fig 8
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IRLR/U8743PbF 100000 5.0 VGS = 0V, f = 1 MHZ ID= 20A C V iss = Cgs + Cgd, C ds SHORTED DS= 24V ) C V rss = Cgd V( 4.0 DS= 15V C e oss = Cds + Cgd g ) at F l p 10000 o ( V e 3.0 e c C c n iss r a u ti o c S a - p ot 2.0 a - C e C t , 1000 oss a C G C , rss S G 1.0 V 100 0.0 1 10 100 0 5 10 15 20 25 30 35 40 45 50 V Q DS, Drain-to-Source Voltage (V) G, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) A( A 1000 T ( t J = 175°C 100 t n n er e 100µsec r rr u u C T C 100 1msec ni J = 25°C e a c r r 10 10msec D u o e S s - r o 10 e t v - e ni R a r , 1 D D , I S 1 I D Tc = 25°C Tj = 175°C VGS = 0V Single Pulse 0.1 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 10 100 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) A( A 1000 T ( t J = 175°C 100 t n n er e 100µsec r rr u u C T C 100 1msec ni J = 25°C e a c r r 10 10msec D u o e S s - r o 10 e t v - e ni R a r , 1 D D , I S 1 I D Tc = 25°C Tj = 175°C VGS = 0V Single Pulse 0.1 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 10 100 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com