Datasheet VIPER17 (STMicroelectronics) - 5
| Hersteller | STMicroelectronics |
| Beschreibung | Energy saving VIPerPlus: HV switching regulator for flyback converter |
| Seiten / Seite | 31 / 5 — VIPER17. Electrical data. 4.1. Maximum ratings. Table 4: Absolute maximum … |
| Dateiformat / Größe | PDF / 2.4 Mb |
| Dokumentensprache | Englisch |
VIPER17. Electrical data. 4.1. Maximum ratings. Table 4: Absolute maximum ratings. Value. Symbol. Pin (DIP-7). Parameter. Unit. Min. Max. 4.2
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VIPER17 Electrical data 4 Electrical data 4.1 Maximum ratings Table 4: Absolute maximum ratings Value Symbol Pin (DIP-7) Parameter Unit Min. Max.
VDRAIN 7, 8 Drain-to-source (ground) voltage 800 V Repetitive avalanche energy EAV 7, 8 2 mJ (limited by TJ = 150 °C) Repetitive avalanche current IAR 7, 8 1 A (limited by TJ = 150 °C) IDRAIN 7, 8 Pulse drain current 2.5 A Control input pin voltage VCONT 3 -0.3 Self limited V (with ICONT = 1 mA) VFB 4 Feed-back voltage -0.3 5.5 V Brown-out input pin voltage VBR 5 -0.3 Self limited V (with IBR = 0.5 mA) VDD 2 Supply voltage (IDD = 25 mA) -0.3 Self limited V IDD 2 Input current 25 mA Power dissipation at TA < 40 °C (DIP-7) 1 W PTOT Power dissipation at TA < 60 °C (SO16N) 1 W TJ Operating junction temperature range -40 150 °C TSTG Storage temperature -55 150 °C ESD(HBM) 1 to 8 Human body model 4 kV ESD(CDM) 1 to 8 Charge device model 1.5 kV
4.2 Thermal data Table 5: Thermal data Max. value Max. value Symbol Parameter Unit SO16N DIP-7
Thermal resistance junction pin RthJP 35 40 °C/W (dissipated power = 1 W) Thermal resistance junction ambient RthJA 110 110 °C/W (dissipated power = 1 W) Thermal resistance junction ambient RthJA 80 90 °C/W (dissipated power = 1 W) (1)
Notes:
(1)When mounted on a standard single side FR4 board with 100 mm2 (0.155 sq in) of Cu (35 µm thick). DocID14419 Rev 11 5/31
VIPER17 Electrical data 4 Electrical data 4.1 Maximum ratings Table 4: Absolute maximum ratings Value Symbol Pin (DIP-7) Parameter Unit Min. Max.
VDRAIN 7, 8 Drain-to-source (ground) voltage 800 V Repetitive avalanche energy EAV 7, 8 2 mJ (limited by TJ = 150 °C) Repetitive avalanche current IAR 7, 8 1 A (limited by TJ = 150 °C) IDRAIN 7, 8 Pulse drain current 2.5 A Control input pin voltage VCONT 3 -0.3 Self limited V (with ICONT = 1 mA) VFB 4 Feed-back voltage -0.3 5.5 V Brown-out input pin voltage VBR 5 -0.3 Self limited V (with IBR = 0.5 mA) VDD 2 Supply voltage (IDD = 25 mA) -0.3 Self limited V IDD 2 Input current 25 mA Power dissipation at TA < 40 °C (DIP-7) 1 W PTOT Power dissipation at TA < 60 °C (SO16N) 1 W TJ Operating junction temperature range -40 150 °C TSTG Storage temperature -55 150 °C ESD(HBM) 1 to 8 Human body model 4 kV ESD(CDM) 1 to 8 Charge device model 1.5 kV
4.2 Thermal data Table 5: Thermal data Max. value Max. value Symbol Parameter Unit SO16N DIP-7
Thermal resistance junction pin RthJP 35 40 °C/W (dissipated power = 1 W) Thermal resistance junction ambient RthJA 110 110 °C/W (dissipated power = 1 W) Thermal resistance junction ambient RthJA 80 90 °C/W (dissipated power = 1 W) (1)
Notes:
(1)When mounted on a standard single side FR4 board with 100 mm2 (0.155 sq in) of Cu (35 µm thick). DocID14419 Rev 11 5/31