Datasheet SUD19N20-90 (Vishay) - 4
| Hersteller | Vishay |
| Beschreibung | N-Channel 200 V (D-S) 175 °C MOSFET |
| Seiten / Seite | 8 / 4 — SUD19N20-90. TYPICAL CHARACTERISTICS. On-Resistance vs. Junction … |
| Dateiformat / Größe | PDF / 171 Kb |
| Dokumentensprache | Englisch |
SUD19N20-90. TYPICAL CHARACTERISTICS. On-Resistance vs. Junction Temperature. Source-Drain Diode Forward Voltage
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SUD19N20-90
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 3.0 100 VGS = 10 V I 2.5 D = 5 A 2.0 rrent (A) u TJ = 150 °C 1.5 10 On-Resistance - ormalized) rce C (N u o (on) 1.0 - S DSR I S TJ = 25 °C 0.5 0.0 1 - 50 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS
25 100 10 µs 20 Limited by RDS(on)* 100 µs 10 15 rrent (A) u 1 ms Drain C 10 - - Drain Current (A) 1 10 ms I D I D 100 ms 5 T C = 25 °C Single Pulse 1 s, DC 0 0.1 0 25 50 75 100 125 150 175 1 . 0 1 0 1 100 0 0 0 1 TC - Case Temperature (°C) V - Drain-to-Source Voltage (V) DS
Maximum Avalanche Drain Current
* V > minimum V at which R is specified GS GS DS(on)
vs. Case Temperature Safe Operating Area
2 1 Duty Cycle = 0.5 ransient 0.2 T 0.1 fective 0.1 0.05 Thermal Impedance 0.02 Normalized Ef Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 30 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71767. www.vishay.com Document Number: 71767 4 S10-2245-Rev. E, 04-Oct-10
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 3.0 100 VGS = 10 V I 2.5 D = 5 A 2.0 rrent (A) u TJ = 150 °C 1.5 10 On-Resistance - ormalized) rce C (N u o (on) 1.0 - S DSR I S TJ = 25 °C 0.5 0.0 1 - 50 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS
25 100 10 µs 20 Limited by RDS(on)* 100 µs 10 15 rrent (A) u 1 ms Drain C 10 - - Drain Current (A) 1 10 ms I D I D 100 ms 5 T C = 25 °C Single Pulse 1 s, DC 0 0.1 0 25 50 75 100 125 150 175 1 . 0 1 0 1 100 0 0 0 1 TC - Case Temperature (°C) V - Drain-to-Source Voltage (V) DS
Maximum Avalanche Drain Current
* V > minimum V at which R is specified GS GS DS(on)
vs. Case Temperature Safe Operating Area
2 1 Duty Cycle = 0.5 ransient 0.2 T 0.1 fective 0.1 0.05 Thermal Impedance 0.02 Normalized Ef Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 30 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71767. www.vishay.com Document Number: 71767 4 S10-2245-Rev. E, 04-Oct-10