Datasheet BPV11F (Vishay) - 3

HerstellerVishay
BeschreibungSilicon NPN Phototransistor
Seiten / Seite5 / 3 — BPV11F
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BPV11F

BPV11F

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BPV11F
www.vishay.com Vishay Semiconductors 100 20 f = 1 MHz 16 10 12 1 V = 5 V 8 CE λ = 950 nm 0.1 4 - Collector Light Current (mA) - Collector Base Capacitance (pF) I ca CBO 0.01 0 C 0.01 0.1 1 10 0.1 1 10 100 94 8244 Ee - Irradiance (mW/cm²) 94 8246 VCB - Collector Base Voltage (V) Fig. 4 - Collector Light Current vs. Irradiance Fig. 7 - Collector Base Capacitance vs. Collector Base Voltage 100 20 λ = 950 nm f = 1 MHz 16 E = 1 mW/cm2 e 10 0.5 mW/cm2 12 0.2 mW/cm2 8 1 0.1 mW/cm2 0.05 mW/cm2 4 - Collector Light Current (mA) I ca 0.02 mW/cm2 - Collector Ermitter Capacitance (pF) 0.1 0 CEO 0.1 1 10 100 C 0.1 1 10 100 94 8245 VCE - Collector Emitter Voltage (V) 94 8247 VCE - Collector Ermitter Voltage (V) Fig. 5 - Collector Light Current vs. Collector Emitter Voltage Fig. 8 - Collector Emitter Capacitance vs. Collector Emitter Voltage 800 12 = 5 V V = 5 V 10 VCE CE 600 R = 100 Ω L λ = 950 nm 8 400 6 ton 4 B - Amplification 200 - Turn-on/Turn-off Time (µs) off 2 t /t off t on 0 0 0.01 0.1 1 10 100 0 4 8 12 16 94 8250 I I C - Collector Current (mA) 94 8253 C - Collector Current (mA) Fig. 6 - Amplification vs. Collector Current Fig. 9 - Turn-on/Turn-off Time vs. Collector Current Rev. 1.6, 03-May-13
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