Datasheet MPSH81, MMBTH81 (ON Semiconductor) - 3

MPSH81 / MMBTH81 PNP RF Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 20 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 3.0 V ICBO Collector Cutoff Current VCB = 10 V, IE = 0 100 nA IEBO Emitter Cutoff Current VEB = 2.0 V, IC = 0 100 nA ON CHARACTERISTICS hFE DC Current Gain IC = 5.0 mA, VCE = 10 V 60 V Collector-Emitter Saturation Voltage I CE(sat) C = 5.0 mA, IB = 0.5 mA 0.5 V V Base-Emitter On Voltage I BE(on) C = 5.0 mA, VCE = 10 V 0.9 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 5.0 mA, VCE = 10 V, 600 MHz f = 100 MHz Ccb Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.85 pF Cce Collector Emitter Capcitance VCB = 10 V, IB = 0, f = 1.0 MHz 0.65 pF
*
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE:
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 Bf=133.8 Ise=1.678p Ne=2.159 Ikf=.1658 Nk=.901 Xtb=1.5 Var=100 Br=1 Isc=9.519n Nc=3.88 Ikr=5.813 Rc=7.838 Cjc=2.81p Mjc=.1615 Vjc=.8282 Fc=.5 Cje=2.695p Mje=.3214 Vje=.7026 Tr=11.32n Tf=97.83p Itf=69.29 Xtf=599u Vtf=10)
Typical Characteristics DC Current Gain vs Collector Saturation Voltage Collector Current ) vs Collector Current V (
200
E -
1
G I = 10 I C B
180
V = 1.0V CE A N T -
0.5
T L A = 125°C AI
160
O G
140
. V T T N -
0.2
A
120
T A = 25°C T A = 25°C T A = 125°C S R RRE
100
-
0.1
O T CU
80
C E-
0.05
T A = - 55°C
60
L DC T A = 5 - 5°C L - O FE
40
h C-
0.02 20
-) AT
0
(S -
0.01
-
0.1
-
1
-
10
-
100
CE
0.1
- -
1
-
10
-
100
V I - I - C COLLE CTO R CURRE NT ( mA) C COLLE CTOR CURRENT (mA)
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