Datasheet MBT3946DW1T1G, SMBT3946DW1T1G (ON Semiconductor) - 4
| Hersteller | ON Semiconductor |
| Beschreibung | Complementary General Purpose Transistor |
| Seiten / Seite | 13 / 4 — MBT3946DW1T1G, SMBT3946DW1T1G. (NPN). Figure 5. Turn-On Time. Figure 6. … |
| Revision | 7 |
| Dateiformat / Größe | PDF / 251 Kb |
| Dokumentensprache | Englisch |
MBT3946DW1T1G, SMBT3946DW1T1G. (NPN). Figure 5. Turn-On Time. Figure 6. Rise Time. Figure 7. Storage Time. Figure 8. Fall Time
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MBT3946DW1T1G, SMBT3946DW1T1G (NPN)
500 500 IC/IB = 10 V 300 300 CC = 40 V IC/IB = 10 200 200 100 100 70 tr @ VCC = 3.0 V 70 50 TIME (ns) 50 TIME (ns) 30 30 40 V 20 t , RISE r 20 15 V 10 10 (NPN) (NPN) 7 t 2.0 V 7 d @ VOB = 0 V 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn-On Time Figure 6. Rise Time
500 500 t′s = ts - 1/8 tf V 300 300 CC = 40 V I I IB1 = IB2 I 200 C/IB = 20 C/IB = 10 200 B1 = IB2 IC/IB = 20 100 100 70 70 TIME (ns) 50 IC/IB = 20 TIME (ns) 50 ALL IC/IB = 10 I ORAGE 30 30 C/IB = 10 t , F f 20 20 t , ST′ s 10 (NPN) 10 (NPN) 7 7 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time Figure 8. Fall Time TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 14 SOURCE RESISTANCE = 200 W f = 1.0 kHz I I 12 C = 1.0 mA 10 C = 1.0 mA 10 IC = 0.5 mA 8 SOURCE RESISTANCE = 200 W IC = 50 mA IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 100 mA 6 IC = 50 mA , NOISE FIGURE (dB) 4 , NOISE FIGURE (dB) NF NF 4 2 SOURCE RESISTANCE = 500 W 2 I (NPN) (NPN) C = 100 mA 0 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)
Figure 9. Noise Figure Figure 10. Noise Figure http://onsemi.com 4
500 500 IC/IB = 10 V 300 300 CC = 40 V IC/IB = 10 200 200 100 100 70 tr @ VCC = 3.0 V 70 50 TIME (ns) 50 TIME (ns) 30 30 40 V 20 t , RISE r 20 15 V 10 10 (NPN) (NPN) 7 t 2.0 V 7 d @ VOB = 0 V 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn-On Time Figure 6. Rise Time
500 500 t′s = ts - 1/8 tf V 300 300 CC = 40 V I I IB1 = IB2 I 200 C/IB = 20 C/IB = 10 200 B1 = IB2 IC/IB = 20 100 100 70 70 TIME (ns) 50 IC/IB = 20 TIME (ns) 50 ALL IC/IB = 10 I ORAGE 30 30 C/IB = 10 t , F f 20 20 t , ST′ s 10 (NPN) 10 (NPN) 7 7 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time Figure 8. Fall Time TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 14 SOURCE RESISTANCE = 200 W f = 1.0 kHz I I 12 C = 1.0 mA 10 C = 1.0 mA 10 IC = 0.5 mA 8 SOURCE RESISTANCE = 200 W IC = 50 mA IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 100 mA 6 IC = 50 mA , NOISE FIGURE (dB) 4 , NOISE FIGURE (dB) NF NF 4 2 SOURCE RESISTANCE = 500 W 2 I (NPN) (NPN) C = 100 mA 0 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)
Figure 9. Noise Figure Figure 10. Noise Figure http://onsemi.com 4