Datasheet ADG854 (Analog Devices) - 8 Hersteller Analog Devices Beschreibung 0.5 Ω CMOS, 1.8 V to 5.5 V, Dual SPDT/2:1 Mux, Mini LFCSP Seiten / Seite 16 / 8 — ADG854. DD = 5V. A = 25°C. –10. VDD = 5V, 3.3V. –20. p N (. B) –30. N (. … Dateiformat / Größe PDF / 303 Kb Dokumentensprache Englisch
ADG854. DD = 5V. A = 25°C. –10. VDD = 5V, 3.3V. –20. p N (. B) –30. N (. –40. JE N I. UAT. –50. N E T. VDD = 3V. –60. CHARG. VDD = 2.5V. –70. –80. –90. 0.1. 100
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Modelllinie für dieses Datenblatt Textversion des Dokuments ADG854 70 0 V T DD = 5V A = 25°C –10 60 VDD = 5V, 3.3V –20 C) 50 p N ( B) –30 d IO 40 N ( CT –40 IO JE N I UAT 30 –50 E N E T VDD = 3V –60 AT 20 CHARG VDD = 2.5V –70 10 09–80 0 7- 080 07–90 120 1 2 3 4 5 6 0.1 1 10 100 1k 07-SOURCE VOLTAGE (V) FREQUENCY (MHz) 08 07 Figure 9. Charge Injection vs. Source Voltage Figure 12. Off Isolation vs. Frequency35 0 TA = 25°C –10 V 30 DD = 5V, 3.3V S1A to S1B –20 25 tON (3.3V) –30 B) S1A to S2A d ) –40 20 K ( (ns t AL ON (5V) –50 T S TIME 15 S –60 CRO 10 tOFF (5V) –70 –80 5 0 01–90 7-t 08OFF (3.3V) 0 07–100 13–60 –40 –20 0 20 40 60 80 100 0.1 1 10 100 1k 07-TEMPERATURE (°C) FREQUENCY (MHz) 08 07 Figure 10. tON/tOFF Times vs. Temperature Figure 13. Crosstalk vs. Frequency0 0.25 –2 0.20 –4 B) d V ( DD = 2.7V S –6 S ) 0.15 O % V –8 DD = 3.6V N L N ( IO D + RT V –10 H 0.10 DD = 4.2V E T INS T –12 A = 25°C V VDD = 5.5V DD = 5V, 3.3V 0.05 –14 –16 110 140.1 1 10 100 1k 0 0 7-100 1k 10k 100k 7-FREQUENCY (MHz) 08FREQUENCY (Hz) 08 07 07 Figure 11. Bandwidth Figure 14. Total Harmonic Distortion + Noise (THD+N) vs. Frequency Rev. 0 | Page 8 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTION TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS TERMINOLOGY OUTLINE DIMENSIONS ORDERING GUIDE