Datasheet ADG758, ADG759 (Analog Devices) - 4

ADG758/ADG759–SPECIFICATIONS1 DUAL SUPPLY (VDD = +2.5 V 10%, VSS = –2.5 V 10%, GND = 0 V, unless otherwise noted.) B Version –40 C Parameter +25 C to +85 C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VSS to VDD V ON Resistance (RON) 2.5 Ω typ VS = VSS to VDD, IDS = 10 mA; 4.5 5 Ω max Test Circuit 1 ON Resistance Match Between 0.4 Ω typ Channels (∆RON) 0.8 Ω max VS = VSS to VDD, IDS = 10 mA ON Resistance Flatness (RFLAT(ON)) 0.6 Ω typ VS = VSS to VDD, IDS = 10 mA 1.0 Ω max LEAKAGE CURRENTS VDD = +2.75 V, VSS = –2.75 V Source OFF Leakage IS (OFF) ±0.01 nA typ VS = +2.25 V/–1.25 V, VD = –1.25 V/+2.25 V; ±0.1 ±0.3 nA max Test Circuit 2 Drain OFF Leakage ID (OFF) ±0.01 nA typ VS = +2.25 V/–1.25 V, VD = –1.25 V/+2.25 V; ±0.1 ±0.75 nA max Test Circuit 3 Channel ON Leakage ID, IS (ON) ±0.01 nA typ VS = VD = +2.25 V/–1.25 V; Test Circuit 4 ±0.1 ±0.75 nA max DIGITAL INPUTS Input High Voltage, VINH 1.7 V min Input Low Voltage, VINL 0.7 V max Input Current IINL or IINH 0.005 µA typ VIN = VINL or VINH ±0.1 µA max CIN, Digital Input Capacitance 2 pF typ DYNAMIC CHARACTERISTICS2 tTRANSITION 14 ns typ RL = 300 Ω, CL = 35 pF; Test Circuit 5 25 ns max VS = 1.5 V/0 V; Test Circuit 5 Break-Before-Make Time Delay, tD 8 ns typ RL = 300 Ω, CL = 35 pF 1 ns min VS = 1.5 V; Test Circuit 6 tON (EN) 14 ns typ RL = 300 Ω, CL = 35 pF 25 ns max VS = 1.5 V; Test Circuit 7 tOFF (EN) 8 ns typ RL = 300 Ω, CL = 35 pF 15 ns max VS = 1.5 V; Test Circuit 7 Charge Injection ±3 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; Test Circuit 8 Off Isolation –60 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz –80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 9 Channel-to-Channel Crosstalk –60 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz –80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 10 –3 dB Bandwidth 55 MHz typ RL = 50 Ω, CL = 5 pF; Test Circuit 11 CS (OFF) 13 pF typ f = 1 MHz CD (OFF) ADG758 85 pF typ f = 1 MHz ADG759 42 pF typ f = 1 MHz CD, CS (ON) ADG758 96 pF typ f = 1 MHz ADG759 48 pF typ f = 1 MHz POWER REQUIREMENTS VDD = +2.75 V IDD 0.001 µA typ Digital Inputs = 0 V or 2.75 V 1.0 µA max ISS 0.001 µA typ VSS = –2.75 V 1.0 µA max Digital Inputs = 0 V or 2.75 V NOTES 1Temperature range is as follows: B Version: –40°C to +85°C. 2Guaranteed by design, not subject to production test. Specifications subject to change without notice. –4– REV. B