Datasheet ADG5436 (Analog Devices) - 4

HerstellerAnalog Devices
BeschreibungHigh Voltage Latch-Up Proof, Dual SPDT Switches
Seiten / Seite19 / 4 — ADG5436. Data Sheet. Parameter. 25°C. −40°C to +85°C −40°C to +125°C …
RevisionC
Dateiformat / GrößePDF / 498 Kb
DokumentenspracheEnglisch

ADG5436. Data Sheet. Parameter. 25°C. −40°C to +85°C −40°C to +125°C Unit. Test Conditions/Comments. ±20 V DUAL SUPPLY

ADG5436 Data Sheet Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments ±20 V DUAL SUPPLY

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ADG5436 Data Sheet Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V IDD 45 µA typ Digital inputs = 0 V or VDD 55 70 µA max ISS 0.001 µA typ Digital inputs = 0 V or VDD 1 µA max VDD/VSS ±9/±22 V min/V max GND = 0 V 1 Guaranteed by design; not subject to production test.
±20 V DUAL SUPPLY
VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2. Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 9 Ω typ VS = ±15 V, IS = −10 mA; see Figure 25 10 13 15 Ω max VDD = +18 V, VSS = −18 V On-Resistance Match 0.35 Ω typ VS = ±15 V , IS = −10 mA Between Channels, ∆RON 0.7 0.9 1.1 Ω max On-Resistance Flatness, RFLAT (ON) 1.5 Ω typ VS = ±15 V, IS = −10 mA 1.8 2.2 2.5 Ω max LEAKAGE CURRENTS VDD = +22 V, VSS = −22 V Source Off Leakage, IS (Off) ±0.05 nA typ VS = ±15 V, VD =  15 V; see Figure 28 ±0.25 ±0.75 ±6 nA max Drain Off Leakage, ID (Off) ±0.1 nA typ VS = ±15 V, VD =  15 V; see Figure 28 ±0.4 ±2 ±12 nA max Channel On Leakage, ID (On), IS (On) ±0.1 nA typ VS = VD = ±15 V; see Figure 24 ±0.4 ±2 ±12 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 5 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 158 ns typ RL = 300 Ω, CL = 35 pF 217 260 293 ns max VS = 10 V; see Figure 31 tON 164 ns typ RL = 300 Ω, CL = 35 pF 213 256 287 ns max VS = 10 V; see Figure 33 tOFF 110 ns typ RL = 300 Ω, CL = 35 pF 152 173 194 ns max VS = 10 V; see Figure 33 Break-Before-Make Time Delay, tD 50 ns typ RL = 300 Ω, CL = 35 pF 15 ns min VS1 = VS2 = 10 V; see Figure 32 Charge Injection, QINJ 250 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 34 Off Isolation −78 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 27 Channel-to-Channel Crosstalk −58 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26 Total Harmonic Distortion + Noise 0.007 % typ RL = 1 kΩ, 20 V p-p, f = 20 Hz to 20 kHz; see Figure 29 −3 dB Bandwidth 100 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 30 Rev. C | Page 4 of 19 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAMS GENERAL DESCRIPTION PRODUCT HIGHLIGHTS REVISION HISTORY SPECIFICATIONS ±15 V DUAL SUPPLY ±20 V DUAL SUPPLY 12 V SINGLE SUPPLY 36 V SINGLE SUPPLY CONTINUOUS CURRENT PER CHANNEL, Sx OR Dx ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TRUTH TABLE FOR SWITCHES TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS TERMINOLOGY TRENCH ISOLATION APPLICATIONS INFORMATION OUTLINE DIMENSIONS ORDERING GUIDE