Datasheet ADG5208, ADG5209 (Analog Devices) - 4

HerstellerAnalog Devices
BeschreibungHigh Voltage Latch-Up Proof, 4-/8-Channel Multiplexers
Seiten / Seite24 / 4 — ADG5208/ADG5209. Data Sheet. Parameter. 25°C. −40°C to +85°C. −40°C to …
RevisionC
Dateiformat / GrößePDF / 472 Kb
DokumentenspracheEnglisch

ADG5208/ADG5209. Data Sheet. Parameter. 25°C. −40°C to +85°C. −40°C to +125°C. Unit. Test Conditions/Comments. ±20 V DUAL SUPPLY

ADG5208/ADG5209 Data Sheet Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments ±20 V DUAL SUPPLY

Modelllinie für dieses Datenblatt

Textversion des Dokuments

link to page 16 link to page 16 link to page 16 link to page 16 link to page 17 link to page 17 link to page 17 link to page 17 link to page 18 link to page 16 link to page 16 link to page 16 link to page 16 link to page 5
ADG5208/ADG5209 Data Sheet Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V IDD 45 µA typ Digital inputs = 0 V or VDD 55 70 µA max ISS 0.001 µA typ Digital inputs = 0 V or VDD 1 µA max VDD/VSS ±9/±22 V min/V max GND = 0 V 1 Guaranteed by design; not subject to production test.
±20 V DUAL SUPPLY
VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2. Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 140 Ω typ VS = ±15 V, IS = −1 mA; see Figure 28 160 200 230 Ω max VDD = +18 V, VSS = −18 V On-Resistance Match Between 3.5 Ω typ VS = ±15 V, IS = −1 mA Channels, ∆RON 8 9 10 Ω max On-Resistance Flatness, RFLAT (ON) 34 Ω typ VS = ±15 V, IS = −1 mA 45 55 60 Ω max LEAKAGE CURRENTS VDD = +22 V, VSS = −22 V Source Off Leakage, IS (Off) ±0.005 nA typ VS = ±15 V, VD =  15 V; see Figure 30 ±0.1 ±0.2 ±0.4 nA max Drain Off Leakage, ID (Off) ±0.005 nA typ VS = ±15 V, VD =  15 V; see Figure 30 ±0.1 ±0.4 ±1.4 nA max Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = ±15 V; see Figure 27 ±0.2 ±0.5 ±1.4 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 140 ns typ RL = 300 Ω, CL = 35 pF 170 195 220 ns max VS = 10 V; see Figure 33 tON (EN) 120 ns typ RL = 300 Ω, CL = 35 pF 140 170 195 ns max VS = 10 V; see Figure 35 tOFF (EN) 160 ns typ RL = 300 Ω, CL = 35 pF 185 205 220 ns max VS = 10 V; see Figure 35 Break-Before-Make Time Delay, tD 45 ns typ RL = 300 Ω, CL = 35 pF 20 ns min VS1 = VS2 = 10 V; see Figure 34 Charge Injection, QINJ 0.4 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 36 Off Isolation −86 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31 Channel-to-Channel Crosstalk −80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 −3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 32 ADG5208 121 MHz typ ADG5209 225 MHz typ Insertion Loss −5.6 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 32 Rev. C | Page 4 of 24 Document Outline Features Applications Functional Block Diagrams General Description Product Highlights Table of Contents Revision History Specifications ±15 V Dual Supply ±20 V Dual Supply 12 V Single Supply 36 V Single Supply Continuous Current per Channel, Sx, D, or Dx Pin Configurations and Function Descriptions Typical Performance Characteristics Test Circuits Terminology Trench Isolation Applications Information Outline Dimensions Ordering Guide