Datasheet CDM22011-600LRFP (Central Semiconductor)
| Hersteller | Central Semiconductor |
| Beschreibung | N-CHANNEL LR POWER MOSFET 11 AMP, 600 VOLT |
| Seiten / Seite | 4 / 1 — CDM22011-600LRFP. N-CHANNEL. w w w. c e n t r a l s e m i . c o m. LR … |
| Dateiformat / Größe | PDF / 987 Kb |
| Dokumentensprache | Englisch |
CDM22011-600LRFP. N-CHANNEL. w w w. c e n t r a l s e m i . c o m. LR POWER MOSFET. DESCRIPTION:. 11 AMP, 600 VOLT
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CDM22011-600LRFP N-CHANNEL w w w. c e n t r a l s e m i . c o m LR POWER MOSFET DESCRIPTION: 11 AMP, 600 VOLT
The CENTRAL SEMICONDUCTOR CDM22011-600LRFP is a 600 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This UltraMOSTM MOSFET combines high voltage capability with ultra low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency.
MARKING CODE: CDM11-600LR TO-220FP CASE APPLICATIONS: FEATURES: •
Power Factor Correction
•
High voltage capability (VDS=600V)
•
Alternative energy inverters
•
Low gate charge (Qgs=4.45nC TYP)
•
Solid State Lighting (SSL)
•
Ultra low rDS(ON) (0.3Ω TYP)
MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
SYMBOL UNITS
Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V Continuous Drain Current (Steady State) ID 11 A Maximum Pulsed Drain Current, tp=10μs IDM 44 A Continuous Source Current (Body Diode) IS 11 A Maximum Pulsed Source Current (Body Diode) ISM 44 A Single Pulse Avalanche Energy (Note 1) EAS 280 mJ Power Dissipation PD 25 W Operating and Storage Junction Temperature TJ, Tstg -55 to +150 °C Thermal Resistance JC 5.0 °C/W Thermal Resistance JA 120 °C/W Note 1: L=30mH, IAS=4.0A, VDD=100V, RG=25Ω, Initial TJ=25°C
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IGSSF, IGSSR VGS=30V, VDS=0 100 nA IDSS VDS=600V, VGS=0 0.047 1.0 μA BVDSS VGS=0, ID=250μA 600 V VGS(th) VGS=VDS, ID=250μA 2.0 3.09 4.0 V VSD VGS=0, IS=11A 0.92 1.4 V rDS(ON) VGS=10V, ID=5.5A 0.30 0.36 Ω Crss VDS=100V, VGS=0, f=1.0MHz 2.76 pF Ciss VDS=100V, VGS=0, f=1.0MHz 763 pF Coss VDS=100V, VGS=0, f=1.0MHz 52 pF R4 (19-August 2015)
The CENTRAL SEMICONDUCTOR CDM22011-600LRFP is a 600 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This UltraMOSTM MOSFET combines high voltage capability with ultra low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency.
MARKING CODE: CDM11-600LR TO-220FP CASE APPLICATIONS: FEATURES: •
Power Factor Correction
•
High voltage capability (VDS=600V)
•
Alternative energy inverters
•
Low gate charge (Qgs=4.45nC TYP)
•
Solid State Lighting (SSL)
•
Ultra low rDS(ON) (0.3Ω TYP)
MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
SYMBOL UNITS
Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V Continuous Drain Current (Steady State) ID 11 A Maximum Pulsed Drain Current, tp=10μs IDM 44 A Continuous Source Current (Body Diode) IS 11 A Maximum Pulsed Source Current (Body Diode) ISM 44 A Single Pulse Avalanche Energy (Note 1) EAS 280 mJ Power Dissipation PD 25 W Operating and Storage Junction Temperature TJ, Tstg -55 to +150 °C Thermal Resistance JC 5.0 °C/W Thermal Resistance JA 120 °C/W Note 1: L=30mH, IAS=4.0A, VDD=100V, RG=25Ω, Initial TJ=25°C
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IGSSF, IGSSR VGS=30V, VDS=0 100 nA IDSS VDS=600V, VGS=0 0.047 1.0 μA BVDSS VGS=0, ID=250μA 600 V VGS(th) VGS=VDS, ID=250μA 2.0 3.09 4.0 V VSD VGS=0, IS=11A 0.92 1.4 V rDS(ON) VGS=10V, ID=5.5A 0.30 0.36 Ω Crss VDS=100V, VGS=0, f=1.0MHz 2.76 pF Ciss VDS=100V, VGS=0, f=1.0MHz 763 pF Coss VDS=100V, VGS=0, f=1.0MHz 52 pF R4 (19-August 2015)