Datasheet BS108 (ON Semiconductor) - 3

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BS108 ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−Source Breakdown Voltage V(BR)DS − Vdc (VGS = 0, ID = 10 mA) 200 − − Zero Gate Voltage Drain Current IDSS nAdc (VDSS = 130 Vdc, VGS = 0) − − 30 Gate−Body Leakage Current IGSSF nAdc (VGS = 15 Vdc, VDS = 0) − − 10
ON CHARACTERISTICS
(Note 3) Gate Threshold Voltage VGS(th) Vdc (ID = 1.0 mA, VDS = VGS) 0.5 − 1.5 Static Drain−to−Source On−Resistance rDS(on) W (VGS = 2.0 Vdc, ID = 50 mA) − − 10 (VGS = 2.8 Vdc, ID = 100 mA) − − 8.0 Drain Cutoff Current IDSX mA (VGS = 0.2 V, VDS = 70 V) − − 25 Forward Transconductance gFS Mhos (ID = 120 mA, VDS = 20 V) − 0.33 −
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss pF (VDS = 25 V, VGS = 0, f = 1.0 MHz) − − 150 Output Capacitance Coss pF (VDS = 25 V, VGS = 0, f = 1.0 MHz) − − 30 Reverse Transfer Capacitance Crss pF (VDS = 25 V, VGS = 0, f = 1.0 MHz) − − 10
SWITCHING CHARACTERISTICS
Turn−On Time (See Figure 1) td(on) − − 15 ns Turn−Off Time (See Figure 1) td(off) − − 15 ns 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
RESISTIVE SWITCHING
+25 V TO SAMPLING SCOPE ton toff 23 50 W INPUT 20 dB V PULSE GENERATOR Vin out 90% 90% 50 W ATTENUATOR 40 pF 50 OUTPUT 10% V 50 1.0 M INVERTED out 90% 10 V 50% PULSE 50% INPUT V WIDTH in 10%
Figure 1. Switching Test Circuit Figure 2. Switching Waveforms http://onsemi.com 2