Datasheet BS108 (ON Semiconductor) - 2

link to page 2 BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level
N−Channel TO−92 http://onsemi.com
This MOSFET is designed for high voltage, high speed switching
250 mAMPS
applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage
200 VOLTS
display drivers.
RDS(on) = 8
W
Features
• Low Drive Requirement, V
N−Channel
GS = 3.0 V max • D Inherent Current Sharing Capability Permits Easy Paralleling of many Devices • AEC Qualified • PPAP Capable G • This is a Pb−Free Device* S
MAXIMUM RATINGS Rating Symbol Value Unit MARKING
Drain−Source Voltage VDSS 200 Vdc
DIAGRAM
Gate−Source Voltage VGS ±20 Vdc Drain Current mAdc A Continuous (Note 1) ID 250 BS108 Pulsed (Note 2) IDM 500 YWW G
TO−92
G Total Power Dissipation PD 1
CASE 29−11
@ TA = 25°C 350 mW 2
STYLE 30
Derate above TA = 25°C 6.4 mW/°C 3 Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum BS108 = Device Code Ratings are stress ratings only. Functional operation above the Recommended A = Assembly Location Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Y = Year 1. The Power Dissipation of the package may result in a lower continuous drain WW = Work Week current. G = Pb−Free Package 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. (Note: Microdot may be in either location)
ORDERING INFORMATION Device Package Shipping
BS108ZL1G TO−92 2000/Ammo Pack (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
April, 2011 − Rev. 4 BS108/D