AO4468TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 V =15V DS I =10.5A D 1000 8 ) Ciss F 800 ) 6 (pltseoc n(V 600 itaS Gc 4 Va p a 400 C Coss 2 200 Crss 0 0 0 5 10 15 0 5 10 15 20 25 30 Q (nC)V(Volts)gDSFigure 7: Gate-Charge CharacteristicsFigure 8: Capacitance Characteristics 1000.0 10000 T =25°C A 100.0 1000 10µs )) R s 10.0 DS(ON) 100µs p limited r (Wme 100 w(A 1ms o 1.0 I DP 10ms 10 T =150°C J(Max) 0.1 T =25°C 10s A DC 1 0.0 0.00001 0.001 0.1 10 1000 0.01 0.1 1 10 100 V(Volts)DSPulse Width (s)Figurer 9: Maximum Forwr ardr BiB ased SaS feFigurer 10: SiS ngle PuP lse PoP werr RaR ting Junction-to-Operating Area (Note F)Ambient (Note F) 10 D=T /T In descending order on t n T =T +P .Z .R D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse J,PK A DM θJA θJA ie se c 1 n R =75°C/W n θJA rataTisdseeliz 0.1 al R arm orm eNhAT P 0.01 D θ JZ Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.7.0: July 2013 www.aosmd.com Page 4 of 5