Datasheet BGS12WN6 (Infineon) - 9

BGS12WN6 Wideband SPDT diversity switch with fast switching speed RF characteristics Table 8: IMD3 testcases
Band Symbol In-band Blocker Blocker Blocker Blocker frequency frequency 1 power 1 frequency 2 power 2 (MHz) (MHz) (dBm) (MHz) (dBm) B1 Band 1 IMD3,high 2140 1950 20 6040 -15 B1IMD3,mid 2140 1950 20 1760 -15 B4 Band 4 IMD3,high 2132 1732 20 5596 -15 B4IMD3,mid 2132 1732 20 1332 -15 B5 Band 5 IMD3,high 881.5 836.5 20 2554.5 -15 B5IMD3,mid 881.5 836.5 20 791.5 -15 B7 Band 7 IMD3,high 2655 2535 20 7725 -15 B7IMD3,mid 2655 2535 20 2415 -15
Table 9: Switching time
at TA = −40 ◦C...85 ◦C, PRF = 0 dBm, VDD = 1.65 V...3.6 V, unless otherwise specified
Parameter Symbol Values Unit Note / Test condition Min. Typ. Max. Switching time
1) Switching time tST – 160 220 ns Time between RF states in ac- tive mode VCtrl,H Min. or VCtrl,L max. level to 90% RF-signal RF rise time tRT – 35 80 ns Time between 10% to 90% RF- signal Power up settling time tPUP – 5.8 7 µs Time from VDD Min. power level RF Switch Products with GPIO Ctrl. I/F to 90% RF-signal 1)Measured on application board, without any matching components. One PIN for VDD & One PIN for VCtrl with tRT
for f inte int rnal us u e s only n
V VDD Min. DD tPUP V VCtrl_H Min. Ctrl VCtrl_L Max. tST tST 90% 90% RF Path A tRT 90% RF Path B 10%
Figure 1:
CTRL to RF time 2018-10-06
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15 Datasheet 8 Revision 2.5 2021-12-21 Document Outline Titlepage 1 Features 2 Absolute maximum ratings 3 Operation ranges 4 RF characteristics 5 Application information 6 Package information