Datasheet PMF170XP (Nexperia) - 9

Nexperia PMF170XP 20 V, 1 A P-channel Trench MOSFET
017aaa309 - 5 V VDS GS (V) - 4 ID VGS(pl) - 3 VGS(th) - 2 VGS QGS1 QGS2 - 1 QGS QGD QG(tot) 017aaa137 0 0 1 2 3
Fig. 15. Gate charge waveform definitions
QG (nC) ID = -1.0 A; VDS = -10 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate charge; typical values
017aaa310 -2.0 IS (A) -1.5 -1.0 (1) (2) -0.5 0.00.0 -0.4 -0.8 -1.2 VSD (V) VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C
Fig. 16. Source current as a function of source-drain voltage; typical values
PMF170XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 29 October 2013 9 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information